Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), resistivities: 10-20 ohm-cm - GEsba50D05C2R10US

Ge Wafer Specification

• Growing Method:              CZ
• Orientation:                      (100) +/_0.5 Deg.
• Wafer Size:                      2" dia x  500 microns  
• Surface Polishing:            Two sides epi polished
• Surface roughness:           RMS or Ra:~ 10 A ( by AFM)
• Doping:                            Sb Doped
• Conductor type:                N-type
• Resistivity:                       10-20  Ohms/cm (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)               
• Package:                         under 1000 class clean room      

Typical Properties:

• Structure:                        Cubic, a = 5.6754 A
• Density:                           5.323 g/cm3 at room temperature
• Melting Point:                   937.4 ^oC
• Thermal Conductivity:        640