Ge Wafer (100) 2" dia x 0.5 mm, 2SP, N type ( Sb doped), Resistivities: 1-5 ohm-cm

Ge Wafer Specification

• Growing Method:                CZ
• Orientation:                        (100) +/_0.5 Deg.
• Wafer Size:                        2" dia x  500 microns  
• Surface Polishing:              Two sides epi polished
• Surface roughness:            RMS or Ra:~ 10 A ( by AFM)
• Doping:                             Sb Doped
• Conductor type:                 N-type
• Resistivity:                       1-5 Ohms/cm (If you would like to measure the resistivity accurately, 
                                         please order our Portable 4 Probe Resistivity Testing Instrument.)                    
• Package:                          under 1000 class clean room      

Typical Properties:

• Structure:                          Cubic, a = 5.6754 A
• Density:                            5.323 g/cm3 at room temperature
• Melting Point:                    937.4 ^oC
• Thermal Conductivity:         640