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Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm

Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on  4" Silicon wafer( one side coating)
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          P-type/ B-doped 
  • Resistivity:                  R:0.001-0.005ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         4" +/- 0.5 mm x 0.525 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

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$109.95
Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm
$109.95

Thermal Oxide Wafer: One side 300 nm SiO2 Layer on Si (100), 4"dia x 0.5 mm t, P type, 1SP R:0.001-0.005 ohm.cm

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on  4" Silicon wafer( one side coating)
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          P-type/ B-doped 
  • Resistivity:                  R:0.001-0.005ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         4" +/- 0.5 mm x 0.525 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Product Information

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Description

Thermal oxide Layer

  • Research Grade , about 80 % useful  area
  • SiO2 layer on  4" Silicon wafer( one side coating)
  • Oxide layer thickness: 300 nm   ( 3000A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          P-type/ B-doped 
  • Resistivity:                  R:0.001-0.005ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                         4" +/- 0.5 mm x 0.525 mm
  • Orientation:                (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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