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Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm
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Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal oxide Layer

  • SiO2 layer on Silicon wafer
  • Oxide layer thickness: 50 nm   ( 500A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ P-dped 
  • Resistivity:                  0.01-0.05 ohm.cm   (If you would like to measure the resistivity accurately, 
                                       please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                           5 x 5 x 0.5 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)


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$6.98

Original: $19.95

-65%
Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm—

$19.95

$6.98

Thermal Oxide Wafer: 50 nm SiO2 on Si (100), 5x5 x 0.5 mm, N type ,P-doped 1SP, R:0.01-0.05 ohm.cm

Thermal oxide Layer

  • SiO2 layer on Silicon wafer
  • Oxide layer thickness: 50 nm   ( 500A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ P-dped 
  • Resistivity:                  0.01-0.05 ohm.cm   (If you would like to measure the resistivity accurately, 
                                       please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                           5 x 5 x 0.5 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Product Information

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Description

Thermal oxide Layer

  • SiO2 layer on Silicon wafer
  • Oxide layer thickness: 50 nm   ( 500A)  +/-10%
  • Refractive index - 1.455

Silicon Wafer Specifications:

  • Conductive type:          N-type/ P-dped 
  • Resistivity:                  0.01-0.05 ohm.cm   (If you would like to measure the resistivity accurately, 
                                       please order our     Portable 4 Probe Resistivity Testing Instrument.) 
  • Size:                           5 x 5 x 0.5 mm
  • Orientation:                 (100) +/- 1o
  • Polish:                        one side polished
  • Surface roughness, Ra: < 5A (RMS)


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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