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Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

Thermal oxide Layer

Research Grade, about 80% useful area
SiO2 layer on 4"Silicon wafer
Oxide layer thickness: 300 nm (3000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: N-type/ Sb-dped
Resistivity: 0.01- 0.02 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" +/- 0.5 mm x 0.525 mmth
Orientation: (111) +/- 0.5^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)
Optional: you may need tool below to handle the wafer ( click picture to order )

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$33.23

Original: $94.95

-65%

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001—

$94.95

$33.23

Thermal Oxide Wafer: 300 nm SiO2 Layer on Si (111), 4"dia x 0.525 mm t, N-type, Sb-doped 1SP R: 0.01-0.02 ohm.cm - Fm300SOonSISbc101D0525C1R001

Thermal oxide Layer

Research Grade, about 80% useful area
SiO2 layer on 4"Silicon wafer
Oxide layer thickness: 300 nm (3000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: N-type/ Sb-dped
Resistivity: 0.01- 0.02 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" +/- 0.5 mm x 0.525 mmth
Orientation: (111) +/- 0.5^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)
Optional: you may need tool below to handle the wafer ( click picture to order )

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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Description

Thermal oxide Layer

Research Grade, about 80% useful area
SiO2 layer on 4"Silicon wafer
Oxide layer thickness: 300 nm (3000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: N-type/ Sb-dped
Resistivity: 0.01- 0.02 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" +/- 0.5 mm x 0.525 mmth
Orientation: (111) +/- 0.5^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)
Optional: you may need tool below to handle the wafer ( click picture to order )

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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