Thermal Oxide Wafer: 285nm SiO2 on Si (100), 10 x 10 x 0.5 mm, N type ,P-doped 1SP, R:1-10 ohm.cm

Thermal oxide Layer

• SiO2 layer on Silicon wafer
• Oxide layer thickness: 285 nm   ( 500A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N-type/ P-dped 
• Resistivity:                1-10 ohm.cm   (If you would like to measure the resistivity accurately, 
                                     please order our Portable 4 Probe Resistivity Testing Instrument.) 
• Size:                           10 x 10 x 0.5 mm
• Orientation:                 (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness, Ra: < 5A (RMS)

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