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Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal oxide Layer

Research Grade , about 80 % useful area
SiO2 layer on 4'' Silicon wafer
Oxide layer thickness: 1000 nm ( 10000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: P-type/ B-doped
Resistivity: 1-10 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" x 0.5mm
Orientation: (100) +/- 1^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)

Optional: you may need tool below to handle the wafer ( click picture to order )


Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

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$109.95

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm—

$109.95

Thermal Oxide Wafer: 1000 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, Ptype , 1SP,R:1-20 ohm.cm

Thermal oxide Layer

Research Grade , about 80 % useful area
SiO2 layer on 4'' Silicon wafer
Oxide layer thickness: 1000 nm ( 10000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: P-type/ B-doped
Resistivity: 1-10 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" x 0.5mm
Orientation: (100) +/- 1^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)

Optional: you may need tool below to handle the wafer ( click picture to order )


Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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Description

Thermal oxide Layer

Research Grade , about 80 % useful area
SiO2 layer on 4'' Silicon wafer
Oxide layer thickness: 1000 nm ( 10000A) +/-10%
Refractive index - 1.455

Silicon Wafer Specifications:

Conductive type: P-type/ B-doped
Resistivity: 1-10 ohm.cm (If you would like to measure the resistivity accurately,
please order our Portable 4 Probe Resistivity Testing Instrument.)
Size: 4" x 0.5mm
Orientation: (100) +/- 1^o
Polish: one side polished
Surface roughness, Ra: < 5A (RMS)

Optional: you may need tool below to handle the wafer ( click picture to order )


Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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