🚚 Free Worldwide Shipping on All Orders!Shop Now
GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp
HomeStore

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp


Specifications:
  • GaP single crystal wafer
  • Doping: Zn-doped
  • Type of conductivity: P-type
  • Size: 2" diameter x 0.45mm
  • Orientation: (111)B
  • Polished: one side polished
  • Resistivity:4.2E-1 ohm.cm
  • Mobility: 70 cmE2/Vs
  • Carrier Concentration:2.1E17cmE-3
  • EPD: 2.6E4 cmE-2
  • Surface finish (RMS or Ra) : < 8A


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

$465.15

Original: $1,329.00

-65%
GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp

$1,329.00

$465.15

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp


Specifications:
  • GaP single crystal wafer
  • Doping: Zn-doped
  • Type of conductivity: P-type
  • Size: 2" diameter x 0.45mm
  • Orientation: (111)B
  • Polished: one side polished
  • Resistivity:4.2E-1 ohm.cm
  • Mobility: 70 cmE2/Vs
  • Carrier Concentration:2.1E17cmE-3
  • EPD: 2.6E4 cmE-2
  • Surface finish (RMS or Ra) : < 8A


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Product Information

Shipping & Returns

Description


Specifications:
  • GaP single crystal wafer
  • Doping: Zn-doped
  • Type of conductivity: P-type
  • Size: 2" diameter x 0.45mm
  • Orientation: (111)B
  • Polished: one side polished
  • Resistivity:4.2E-1 ohm.cm
  • Mobility: 70 cmE2/Vs
  • Carrier Concentration:2.1E17cmE-3
  • EPD: 2.6E4 cmE-2
  • Surface finish (RMS or Ra) : < 8A


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

GaP Wafer, Zn-doped, (111)B, 2"x0.45 mm, 1sp | MTI Online Store