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GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1
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GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1

GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1

  • GaP single crystal wafer,
  • Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
  • Doping: undoped,
  • Conducting type: N-type,
  • Orientation: (111)+_30'
  • Edge Orientation: (110)±1°
  • Polished:One  side  polished.
  • Surface finish (RMS or Ra) :  < 8A

    Typical Physical Properties

    Crystal Structure

    Cubic.            a =5.4505 ?†7/FONT>

    Growth Method

    CZ (LEC)

    Density

    4.13  g/cm3

    Melt Point

    1480  oC

    Thermal Expansion

    5.3 x10-6  / oC

    Dopant

    S doped

    undoped

    Crystal growth axis

    <111>  or <100>

    <100> or <111>

    Conducting Type

    N

    N

    Carrier Concentration

    2 ~ 8 x1017 /cm3

    4 ~ 6 x1016 /cm3

    Resistivity

    ~ 0.03 W-cm

    ~ 0.3 W-cm

    EPD

    < 3x105

    < 3x105


    Related Product

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    Plasma Cleaner

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    Dicing saw

    Film Coater
    $388.15

    Original: $1,109.00

    -65%
    GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1—

    $1,109.00

    $388.15

    GaP Wafer, undoped (111) 2"x0.5 mm, 1sp - GPUc50D05C1

    • GaP single crystal wafer,
    • Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
    • Doping: undoped,
    • Conducting type: N-type,
    • Orientation: (111)+_30'
    • Edge Orientation: (110)±1°
    • Polished:One  side  polished.
    • Surface finish (RMS or Ra) :  < 8A

      Typical Physical Properties

      Crystal Structure

      Cubic.            a =5.4505 ?†7/FONT>

      Growth Method

      CZ (LEC)

      Density

      4.13  g/cm3

      Melt Point

      1480  oC

      Thermal Expansion

      5.3 x10-6  / oC

      Dopant

      S doped

      undoped

      Crystal growth axis

      <111>  or <100>

      <100> or <111>

      Conducting Type

      N

      N

      Carrier Concentration

      2 ~ 8 x1017 /cm3

      4 ~ 6 x1016 /cm3

      Resistivity

      ~ 0.03 W-cm

      ~ 0.3 W-cm

      EPD

      < 3x105

      < 3x105


      Related Product

      Other Crystal wafer A-Z

      Plasma Cleaner

       Wafer Containers

      Dicing saw

      Film Coater

      Product Information

      Shipping & Returns

      Description

      • GaP single crystal wafer,
      • Size: 2" diameter(+/_0.15mm) x 0.5mm(+/_ 0.05mm),
      • Doping: undoped,
      • Conducting type: N-type,
      • Orientation: (111)+_30'
      • Edge Orientation: (110)±1°
      • Polished:One  side  polished.
      • Surface finish (RMS or Ra) :  < 8A

        Typical Physical Properties

        Crystal Structure

        Cubic.            a =5.4505 ?†7/FONT>

        Growth Method

        CZ (LEC)

        Density

        4.13  g/cm3

        Melt Point

        1480  oC

        Thermal Expansion

        5.3 x10-6  / oC

        Dopant

        S doped

        undoped

        Crystal growth axis

        <111>  or <100>

        <100> or <111>

        Conducting Type

        N

        N

        Carrier Concentration

        2 ~ 8 x1017 /cm3

        4 ~ 6 x1016 /cm3

        Resistivity

        ~ 0.03 W-cm

        ~ 0.3 W-cm

        EPD

        < 3x105

        < 3x105


        Related Product

        Other Crystal wafer A-Z

        Plasma Cleaner

         Wafer Containers

        Dicing saw

        Film Coater

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