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GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2
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GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

  • GaP single crystal wafer,
  • Size: 10mm x 10 mm x 0.35 mm,
  • Doping: undoped,
  • Conducting type: N-type,
  • Orientation: (111)
  • Polished: Two sides
  • Surface finish (RMS or Ra) :: < 8A
  • price is for one piece

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 Å

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105

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$185.00
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2—
$185.00

GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2

  • GaP single crystal wafer,
  • Size: 10mm x 10 mm x 0.35 mm,
  • Doping: undoped,
  • Conducting type: N-type,
  • Orientation: (111)
  • Polished: Two sides
  • Surface finish (RMS or Ra) :: < 8A
  • price is for one piece

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 Å

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

Product Information

Shipping & Returns

Description

  • GaP single crystal wafer,
  • Size: 10mm x 10 mm x 0.35 mm,
  • Doping: undoped,
  • Conducting type: N-type,
  • Orientation: (111)
  • Polished: Two sides
  • Surface finish (RMS or Ra) :: < 8A
  • price is for one piece

Typical Physical Properties

Crystal Structure

Cubic.            a =5.4505 Å

Growth Method

CZ (LEC)

Density

4.13  g/cm3

Melt Point

1480  oC

Thermal Expansion

5.3 x10-6  / oC

Dopant

S doped

undoped

Crystal growth axis

<111>  or <100>

<100> or <111>

Conducting Type

N

N

Carrier Concentration

2 ~ 8 x1017 /cm3

4 ~ 6 x1016 /cm3

Resistivity

~ 0.03 W-cm

~ 0.3 W-cm

EPD

< 3x105

< 3x105

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
GaP Wafer, Undoped (111) 10x10x0.35 mm, 2sp - GPUc1010035S2 | MTI Online Store