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Al2O3 single crystal substrate, <0001> 2" Dia. x 0.43mm 2sp - ALC50D043C2
Features:
Please click here for detail data
-
Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-plane off 0.2+/- 0.1o to M-plane leftwards from the Primary; 0 +/- 0.1o off to A-plane
- Diameter: 50.8mm+/-0.1mm
- Thickness: 430um+/-15 um
- Major Flat: A-axis[11-20]+/-0.3o
- Major Flat Length: 16mm +/- 1mm
- Surface Finish: Front side: Epi- polished; Back side: Epi- polished
- Bow=10 um, TTV: <= 10um, Micro-roughness
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
 |
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
 |
$43.95
Al2O3 single crystal substrate, <0001> 2" Dia. x 0.43mm 2sp - ALC50D043C2—
$43.95
Al2O3 single crystal substrate, <0001> 2" Dia. x 0.43mm 2sp - ALC50D043C2
Features:
Please click here for detail data
-
Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-plane off 0.2+/- 0.1o to M-plane leftwards from the Primary; 0 +/- 0.1o off to A-plane
- Diameter: 50.8mm+/-0.1mm
- Thickness: 430um+/-15 um
- Major Flat: A-axis[11-20]+/-0.3o
- Major Flat Length: 16mm +/- 1mm
- Surface Finish: Front side: Epi- polished; Back side: Epi- polished
- Bow=10 um, TTV: <= 10um, Micro-roughness
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
Please click here for detail data
-
Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-plane off 0.2+/- 0.1o to M-plane leftwards from the Primary; 0 +/- 0.1o off to A-plane
- Diameter: 50.8mm+/-0.1mm
- Thickness: 430um+/-15 um
- Major Flat: A-axis[11-20]+/-0.3o
- Major Flat Length: 16mm +/- 1mm
- Surface Finish: Front side: Epi- polished; Back side: Epi- polished
- Bow=10 um, TTV: <= 10um, Micro-roughness
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
