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Al2O3 - Sapphire Wafer 0.25"x0.25"x0.5 mm, A plane (11-20), 1 SP
Features:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size:0.25" x 0.25" x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. A plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A
- 1 side polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 (mohs)
- Thermal Expansion: 7.5x10-6 (/oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @ 300K at A axis, ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis , < 5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
 |
 |
 |
 |
 |
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
 |
 |
 |
 |
 |
$8.75
Original: $25.00
-65%Al2O3 - Sapphire Wafer 0.25"x0.25"x0.5 mm, A plane (11-20), 1 SP—
$25.00
$8.75Al2O3 - Sapphire Wafer 0.25"x0.25"x0.5 mm, A plane (11-20), 1 SP
Features:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size:0.25" x 0.25" x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. A plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A
- 1 side polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 (mohs)
- Thermal Expansion: 7.5x10-6 (/oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @ 300K at A axis, ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis , < 5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size:0.25" x 0.25" x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. A plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 8 A
- 1 side polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 (mohs)
- Thermal Expansion: 7.5x10-6 (/oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @ 300K at A axis, ~ 11.58 @ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis , < 5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
