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Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP
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Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP

Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP

Features: 

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
  • Wafer size: 10 mm x 10 mm  x 0.1 mm thick
  • Orientation tolerance: +/-0.5 o.  A plane orientation 
  • Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
  • 2 sides polished
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 (mohs)
  • Thermal Expansion: 7.5x10-6 (/oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis , < 5 x10-5  at C axis

Please click here for detail data

Please Click link below to find other substrates for III-V Nitride

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3  AlN template   Wafer Carriers Plasma Cleaners Film Coater
A-plane (11-20)
$27.65

Original: $79.00

-65%
Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP—

$79.00

$27.65

Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP

Features: 

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
  • Wafer size: 10 mm x 10 mm  x 0.1 mm thick
  • Orientation tolerance: +/-0.5 o.  A plane orientation 
  • Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
  • 2 sides polished
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 (mohs)
  • Thermal Expansion: 7.5x10-6 (/oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis , < 5 x10-5  at C axis

Please click here for detail data

Please Click link below to find other substrates for III-V Nitride

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3  AlN template   Wafer Carriers Plasma Cleaners Film Coater
A-plane (11-20)

Product Information

Shipping & Returns

Description

Features: 

  • Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties
  • Wafer size: 10 mm x 10 mm  x 0.1 mm thick
  • Orientation tolerance: +/-0.5 o.  A plane orientation 
  • Polished surface: substrate surface is EPI polished via a special CMP procedure with RA < 5 A
  • 2 sides polished
  • Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
  • Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

 

Typical Properties:

  • Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
  • Melting Point: 2040 degree C
  • Density: 3.97 gram/cm2 
  • Growth Technique: CZ
  • Crystal Purity:  >99.99%
  • Hardness: 9 (mohs)
  • Thermal Expansion: 7.5x10-6 (/oC)
  • Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) ) 
  • Dielectric Constant: ~ 9.4 @ 300K  at A axis, ~ 11.58 @ 300K at C axis
  • Loss Tangent at 10 GHz: < 2x10-5  at A axis , < 5 x10-5  at C axis

Please click here for detail data

Please Click link below to find other substrates for III-V Nitride

ZnO SiC GaN MgAl2O4 (spinel) LiGaO2
Other Al2O3  AlN template   Wafer Carriers Plasma Cleaners Film Coater
A-plane (11-20)
Al2O3 - Sapphire Wafer 10x10x0.1 mm A plane (11-20), 2 SP | MTI Online Store