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Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US

Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US

Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US

Fearures:

Monocrystalline Sapphire Wafer
Purity> =99.995%
Wafer size: 100 mm dia x 0.46 mm+/-25um thickness
Orientation: R-plane (11-02) +/- 0.5 deg
Orientaion Flat: 31 +/- 2.5 mm
Primary Flat Location: Projected C-Axis 45 +/- 2 degree
Surface Roughness: Ra <= 5 Angstrom
One side polished
Edge Chamfering: Ground with 45 degree chamfering
Back surface: 1 +/- 0.2 um (by lapping process)
Bow: <= 20um
Laser Mark: none
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
Melting Point: 2040 degree C
Density: 3.97 gram/cm²
Growth Technique: CZ
Crystal Purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: < 2x10^-5 at A axis, <5 x10^-5 at C axis

Please click here for detail data

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$419.90

Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US—

$419.90

Al2O3- Sapphire Wafer, R Plane, 100mm dia x 0.46mm, 1SP - ALR100D046C1US

Fearures:

Monocrystalline Sapphire Wafer
Purity> =99.995%
Wafer size: 100 mm dia x 0.46 mm+/-25um thickness
Orientation: R-plane (11-02) +/- 0.5 deg
Orientaion Flat: 31 +/- 2.5 mm
Primary Flat Location: Projected C-Axis 45 +/- 2 degree
Surface Roughness: Ra <= 5 Angstrom
One side polished
Edge Chamfering: Ground with 45 degree chamfering
Back surface: 1 +/- 0.2 um (by lapping process)
Bow: <= 20um
Laser Mark: none
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
Melting Point: 2040 degree C
Density: 3.97 gram/cm²
Growth Technique: CZ
Crystal Purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: < 2x10^-5 at A axis, <5 x10^-5 at C axis

Please click here for detail data

Related Products


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

Product Information

Shipping & Returns

Description

Fearures:

Monocrystalline Sapphire Wafer
Purity> =99.995%
Wafer size: 100 mm dia x 0.46 mm+/-25um thickness
Orientation: R-plane (11-02) +/- 0.5 deg
Orientaion Flat: 31 +/- 2.5 mm
Primary Flat Location: Projected C-Axis 45 +/- 2 degree
Surface Roughness: Ra <= 5 Angstrom
One side polished
Edge Chamfering: Ground with 45 degree chamfering
Back surface: 1 +/- 0.2 um (by lapping process)
Bow: <= 20um
Laser Mark: none
Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Precaution: R plane sapphire wafer is easy to cleave compared with C plane's. Please handle it with a care

Typical Properties:

Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
Melting Point: 2040 degree C
Density: 3.97 gram/cm²
Growth Technique: CZ
Crystal Purity: >99.99%
Hardness: 9 ( mohs)
Thermal Expansion: 7.5x10^{-6 (}/ ^oC)
Thermal Conductivity: 46.06 @ 0 ^oC, 25.12 @ 100 ^oC, 12.56 @ 400 ^oC ( W/(m.K) )
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
Loss Tangent at 10 GHz: < 2x10^-5 at A axis, <5 x10^-5 at C axis

Please click here for detail data

Related Products


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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