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Al2O3 - Sapphire Wafer, M plane, 5x5x0.5mm, 2 SP - ALM050505S2
Fearures:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size: 5 mm x 5 mm x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. M plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
- 2 sides polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
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$6.65
Original: $19.00
-65%Al2O3 - Sapphire Wafer, M plane, 5x5x0.5mm, 2 SP - ALM050505S2—
$19.00
$6.65Al2O3 - Sapphire Wafer, M plane, 5x5x0.5mm, 2 SP - ALM050505S2
Fearures:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size: 5 mm x 5 mm x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. M plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
- 2 sides polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Fearures:
- Sapphire substrate is the popular substrates for III-V nitrides, superconductor and magnetic epi film due to less mis-matched lattice and stable chemical and physical properties.
- Wafer size: 5 mm x 5 mm x 0.5 mm thick
- Orientation tolerance: +/-0.5 Deg. M plane orientation
- Polished surface: substrate surface is EPI polished via a special CMP procedure with Ra < 5 A
- 2 sides polished
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
