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Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP - ALC76D05C1US
Features:
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-axis[0001]( +-0.3o) with Standard Flat
- Diameter: 76.2mm +/- 0.1mm
- Thickness: 500um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.2o
-
Major Flat Length: 22mm +/- 1.0mm
- Surface Finish: Front sides: Epi- polished Ra<0.5nm(by AFM)
- TTV: < 10um
- Polished surface: One side epi polished by special CMP technology
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
Crystal Purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
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$55.98
Original: $159.95
-65%Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP - ALC76D05C1US—
$159.95
$55.98Al2O3- Sapphire Wafer, C-plane (0001), 3"Dia x0.5 mm, 1SP - ALC76D05C1US
Features:
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-axis[0001]( +-0.3o) with Standard Flat
- Diameter: 76.2mm +/- 0.1mm
- Thickness: 500um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.2o
-
Major Flat Length: 22mm +/- 1.0mm
- Surface Finish: Front sides: Epi- polished Ra<0.5nm(by AFM)
- TTV: < 10um
- Polished surface: One side epi polished by special CMP technology
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
Crystal Purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Related Products
|
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Orientation: C-axis[0001]( +-0.3o) with Standard Flat
- Diameter: 76.2mm +/- 0.1mm
- Thickness: 500um +/- 25 um
- Major Flat: A-axis[11-20]+/-0.2o
-
Major Flat Length: 22mm +/- 1.0mm
- Surface Finish: Front sides: Epi- polished Ra<0.5nm(by AFM)
- TTV: < 10um
- Polished surface: One side epi polished by special CMP technology
- Package: Each wafer is packed in 1000 class clean room
Typical Properties:
-
Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
-
Melting Point: 2040 degree C
-
Density: 3.97 gram/cm2
-
Growth Technique: CZ
-
Crystal Purity: >99.99%
-
Hardness: 9 ( mohs)
-
Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
-
Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
-
Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail data
Related Products
|
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
|
