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Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1
Features:
Please click here for detail data
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Wafer size: 1" dia x 0.5 mm thickness
- (0001) C plane orientation +/-0.5 Deg
- Polished surface: One side epi polished by special CMP technology
- Surface roughness: Ra < 5 A ( by AFM)
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
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$34.30
Original: $98.00
-65%Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1—
$98.00
$34.30Al2O3- Sapphire Wafer, C-plane (0001), 1" Dia x0.5 mm 1SP - ALC25D05C1
Features:
Please click here for detail data
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Wafer size: 1" dia x 0.5 mm thickness
- (0001) C plane orientation +/-0.5 Deg
- Polished surface: One side epi polished by special CMP technology
- Surface roughness: Ra < 5 A ( by AFM)
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
Product Information
Product Information
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Shipping & Returns
Description
Features:
Please click here for detail data
- Sapphire ( single crystal of Al2O3 ) is being used extensively as a substrate for III-V nitrides and for many other epitaxial films
- Wafer size: 1" dia x 0.5 mm thickness
- (0001) C plane orientation +/-0.5 Deg
- Polished surface: One side epi polished by special CMP technology
- Surface roughness: Ra < 5 A ( by AFM)
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- Crystal Purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
- Thermal Conductivity: 46.06 @ 0 oC, 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataRelated Products
Other Sapphire |
GaN |
AlN template |
ZnO |
|
|
|
|
Diamond Scriber |
Vacuum Pen |
Wafer Containers |
Film Coaters |
|
|
|
|
