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Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp
Features:
- A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
- Wafer size: 1" dia x 0.4 - 0.5 mm thickness
- Orientaion: A plane <11-20> orn.+/-0.5 Deg
- Polished surface: Wafer surface is EPI polished via a special CMP procedure
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
 |
 |
 |
 |
 |
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
 |
 |
 |
 |
 |
$40.25
Original: $115.00
-65%Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp—
$115.00
$40.25Al2O3 - Sapphire Wafer 1" x0.5 mm , A plane (11-20), 2sp
Features:
- A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
- Wafer size: 1" dia x 0.4 - 0.5 mm thickness
- Orientaion: A plane <11-20> orn.+/-0.5 Deg
- Polished surface: Wafer surface is EPI polished via a special CMP procedure
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Features:
- A plane (11-20) sapphire wafer is being used extensively as a substrate for III-V nitrides and magnetic epitaxial films due to its better lattice mismatch
- Wafer size: 1" dia x 0.4 - 0.5 mm thickness
- Orientaion: A plane <11-20> orn.+/-0.5 Deg
- Polished surface: Wafer surface is EPI polished via a special CMP procedure
- Package: Each wafer is packed in 1000 class clean room with 100 grade plastic bag with wafer container
Typical Properties:
- Crystal Structure: Hexagonal. a=4.758 Angstroms c=12.99 Angstroms
- Melting Point: 2040 degree C
- Density: 3.97 gram/cm2
- Growth Technique: CZ
- crystal purity: >99.99%
- Hardness: 9 ( mohs)
- Thermal Expansion: 7.5x10-6 (/ oC)
-
Thermal Conductivity: 46.06 @ 0 oC 25.12 @ 100 oC, 12.56 @ 400 oC ( W/(m.K) )
- Dielectric Constant: ~ 9.4 @300K at A axis ~ 11.58@ 300K at C axis
- Loss Tangent at 10 GHz: < 2x10-5 at A axis, <5 x10-5 at C axis
Please click here for detail dataPlease Click link below to find other substrates for III-V Nitride
| ZnO | SiC | GaN | MgAl2O4 (spinel) | LiGaO2 |
|
|
|
|
|
| Other Al2O3 | AlN template |
Wafer Carriers | Plasma Cleaners | Film Coater |
|
|
|
|
|
