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Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition
Substrate:
- N-type S doped InP [100]±0.5°, Nc=~5E18/cc
- Wafer Size: 3" diameter
- Thickness:650+/- 25um
- One side polished, backside etched, US Flats
EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/cc
EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc
$1,399.65
Original: $3,999.00
-65%Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5—
$3,999.00
$1,399.65Lattice matched N-type InGaAs:undoped, on S-doped InP(100) 3"x0.65mm, 1sp - FmInGAonIPa76D065C1US5
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition
Substrate:
- N-type S doped InP [100]±0.5°, Nc=~5E18/cc
- Wafer Size: 3" diameter
- Thickness:650+/- 25um
- One side polished, backside etched, US Flats
EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/cc
EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc
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Description
3" dia. InP/InGaAs/InP layers on InP (100) by MOCVD deposition
Substrate:
- N-type S doped InP [100]±0.5°, Nc=~5E18/cc
- Wafer Size: 3" diameter
- Thickness:650+/- 25um
- One side polished, backside etched, US Flats
EPI Layer 1: 1um thick InP film, n-type Si doped, Nc=~5E15/cc
EPI Layer 2: 3.0±0.5µm thick, lattice matched In0.53Ga0.47As film, n-type undoped, Nc=1E15-1E16/cc
EPI Layer 3(top): 1um thick InP film, n-type Si doped, Nc=1E15-1E16/cc
