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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm
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2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm

2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm

2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition

Substrate:

  • InP Orientation: (100)
  • Doped with Fe, Semi-Insulating
  • Wafer size: 2" diameter x 0.35 mm
  • Resistivity:>1x10^7 ohm.cm
  • Both sides polished


EPI Film :

  • N-type InGaAs(Si-doped), (100)
  • Nc>2x10^18 /cc 
  • Film Thickness :0.5 um (+/- 20%)
  • Roughness of epi-layer is close to 1 mono-layer (ML)
  • One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.

EPI ready surface and packing

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000

 

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$804.65

Original: $2,299.00

-65%
2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm—

$2,299.00

$804.65

2" dia. InGaAs Film on InP (SI) (100) Deposited by MOCVD, 2" dia x0.35mm,2sp,Film:500 nm

2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition

Substrate:

  • InP Orientation: (100)
  • Doped with Fe, Semi-Insulating
  • Wafer size: 2" diameter x 0.35 mm
  • Resistivity:>1x10^7 ohm.cm
  • Both sides polished


EPI Film :

  • N-type InGaAs(Si-doped), (100)
  • Nc>2x10^18 /cc 
  • Film Thickness :0.5 um (+/- 20%)
  • Roughness of epi-layer is close to 1 mono-layer (ML)
  • One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.

EPI ready surface and packing

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Product Information

Shipping & Returns

Description

2" dia. wafer InGaAs film on InP (Semi-insulating)(100) by MOCVD deposition

Substrate:

  • InP Orientation: (100)
  • Doped with Fe, Semi-Insulating
  • Wafer size: 2" diameter x 0.35 mm
  • Resistivity:>1x10^7 ohm.cm
  • Both sides polished


EPI Film :

  • N-type InGaAs(Si-doped), (100)
  • Nc>2x10^18 /cc 
  • Film Thickness :0.5 um (+/- 20%)
  • Roughness of epi-layer is close to 1 mono-layer (ML)
  • One the back side we can expect some deposits and we can't guarantee the same quality (roughness) as in the case of active layer surface.

EPI ready surface and packing

Typical Properties

Dopant

Type

Carrier Concentration

( cm-3)

Mobility

( cm2/V.Sec)

Resistivity

( ohm-cm )

EPD

(cm-2)

Undoped

N

7.5-9.5  x1015

4300-4400

1.6E-1-4.5E-1

<5000

Sn

N

0.5 ~1.0 x1018

0.5 ~1.0 x1018

200 ~ 2400

1500 ~ 2000

0.001 ~ 0.002

0.0025~0.007

3~5 x104

Zn

P

0.8 ~ 2.0  x1018

2.5 ~ 4.0 x1018

2500 ~ 3500

1300 ~ 1600

0.0025 ~ 0.006

1~ 3 x104

Fe

Semi-Insulating

N/A

1550-1640

(2.1-2.7) x107

<5000

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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