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InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US
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InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

2" InSb  wafer   (P type, Ge doped )

  • Size:                      2" dia x 0.45mm  thick
  • Orientation:         <100> +/-0.5 o
  •  Polishing:            one side  polishd
  • Packing:               Sealed in nitrogen in single wafer container  at 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 N/A                         
  • Doping                                                                Ge
  • Conductivity type                                               P Type
  • Carrier Concentration                                     (0.5-5.0) x10^17/cc @77K
  • Mobility                                                               > (4.0-8.4)x10^3 cm2/Vs
  • EPD                                                                    <200  / cm 2

     

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$577.50

Original: $1,650.00

-65%
InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US—

$1,650.00

$577.50

InSb (100) 2" dia x 0.45 mm, P type, Ge doped, 1 sided polished, carrier conc: (0.5-5.0)x10^17/cc - ISGea50D045C1US

2" InSb  wafer   (P type, Ge doped )

  • Size:                      2" dia x 0.45mm  thick
  • Orientation:         <100> +/-0.5 o
  •  Polishing:            one side  polishd
  • Packing:               Sealed in nitrogen in single wafer container  at 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 N/A                         
  • Doping                                                                Ge
  • Conductivity type                                               P Type
  • Carrier Concentration                                     (0.5-5.0) x10^17/cc @77K
  • Mobility                                                               > (4.0-8.4)x10^3 cm2/Vs
  • EPD                                                                    <200  / cm 2

     

 Related Product

Other InSb

 InAs

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

Product Information

Shipping & Returns

Description

2" InSb  wafer   (P type, Ge doped )

  • Size:                      2" dia x 0.45mm  thick
  • Orientation:         <100> +/-0.5 o
  •  Polishing:            one side  polishd
  • Packing:               Sealed in nitrogen in single wafer container  at 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5 o
  • Orientation Flat                                                 N/A                         
  • Doping                                                                Ge
  • Conductivity type                                               P Type
  • Carrier Concentration                                     (0.5-5.0) x10^17/cc @77K
  • Mobility                                                               > (4.0-8.4)x10^3 cm2/Vs
  • EPD                                                                    <200  / cm 2

     

 Related Product

Other InSb

 InAs

 InP 

 GaAs


 GaSb



 Wafer Box

 Film Coater

 RTP Furnaces

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