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InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished
InSb substrate 10x10x0.5 mm (N type, undoped)
- Size: 10x10x0.5 mm
- Orientation <100> +/-0.5o
- Polishing: one-side side polished ( back side etched )
- Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
- Growth method LEC
- Orientation (100) +/- 0.5o
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <1E15 @77K
- Mobility (5.0-3.5)E5 cm2/Vs
- EPD <200 / cm 2
For the quality test reports, please click here.
$69.65
Original: $199.00
-65%InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished—
$199.00
$69.65InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished
InSb substrate 10x10x0.5 mm (N type, undoped)
- Size: 10x10x0.5 mm
- Orientation <100> +/-0.5o
- Polishing: one-side side polished ( back side etched )
- Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
- Growth method LEC
- Orientation (100) +/- 0.5o
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <1E15 @77K
- Mobility (5.0-3.5)E5 cm2/Vs
- EPD <200 / cm 2
For the quality test reports, please click here.
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
InSb substrate 10x10x0.5 mm (N type, undoped)
- Size: 10x10x0.5 mm
- Orientation <100> +/-0.5o
- Polishing: one-side side polished ( back side etched )
- Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room
Properties
- Growth method LEC
- Orientation (100) +/- 0.5o
- Doping Undoped
- Conductivity type N type
- Carrier Concentration <1E15 @77K
- Mobility (5.0-3.5)E5 cm2/Vs
- EPD <200 / cm 2
For the quality test reports, please click here.










