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InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished
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InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

  InSb   substrate 10x10x0.5 mm   (N type, undoped)

  •  Size:                      10x10x0.5 mm
  • Orientation            <100> +/-0.5o 
  •  Polishing:             one-side side polished ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o                                     
  • Doping                                                                Undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                     <1E15 @77K
  • Mobility                                                               (5.0-3.5)E5 cm2/Vs
  • EPD                                                                    <200 / cm 2


For the quality test reports, please click here.


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$69.65

Original: $199.00

-65%
InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

$199.00

$69.65

InSb (100) 10x10x 0.5 mm, Undoped, N type, 1 side polished

  InSb   substrate 10x10x0.5 mm   (N type, undoped)

  •  Size:                      10x10x0.5 mm
  • Orientation            <100> +/-0.5o 
  •  Polishing:             one-side side polished ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o                                     
  • Doping                                                                Undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                     <1E15 @77K
  • Mobility                                                               (5.0-3.5)E5 cm2/Vs
  • EPD                                                                    <200 / cm 2


For the quality test reports, please click here.


Related Product

Other InSb

InAs

InP 

GaAs


GaSb



Wafer Box

Film Coater

RTP Furnaces

 

Product Information

Shipping & Returns

Description

  InSb   substrate 10x10x0.5 mm   (N type, undoped)

  •  Size:                      10x10x0.5 mm
  • Orientation            <100> +/-0.5o 
  •  Polishing:             one-side side polished ( back side etched )
  • Packing:                Sealed under nitrogen with single wafer comtainer  in 1000 class clean room

Properties

  • Growth method                                                 LEC
  • Orientation                                                         (100)  +/- 0.5o                                     
  • Doping                                                                Undoped
  • Conductivity type                                               N type
  • Carrier Concentration                                     <1E15 @77K
  • Mobility                                                               (5.0-3.5)E5 cm2/Vs
  • EPD                                                                    <200 / cm 2


For the quality test reports, please click here.


Related Product

Other InSb

InAs

InP 

GaAs


GaSb



Wafer Box

Film Coater

RTP Furnaces

 

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