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InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

10x10x0.45 mm InSb wafer (N type, Te doped)

Size: 5x5x0.3 mm
Orientation <100> +/-0.5^o with two reference flats
Polishing: one-side side polishd ( back side etched )
Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room

Properties

Growth method LEC
Orientation (100) +/- 0.5^o
Doping Te doped
Conductivity type N type
Carrier Concentration (0.19- 0.5)E18 @77K
Mobility >(3.58-5.6)E4 cm²/Vs
EPD <1200 - 1500 / cm ²

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$34.65

Original: $99.00

-65%

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished—

$99.00

$34.65

InSb (100) 5 x 5 x 0.3 mm, N type, Te doped, 1 side polished

10x10x0.45 mm InSb wafer (N type, Te doped)

Size: 5x5x0.3 mm
Orientation <100> +/-0.5^o with two reference flats
Polishing: one-side side polishd ( back side etched )
Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room

Properties

Growth method LEC
Orientation (100) +/- 0.5^o
Doping Te doped
Conductivity type N type
Carrier Concentration (0.19- 0.5)E18 @77K
Mobility >(3.58-5.6)E4 cm²/Vs
EPD <1200 - 1500 / cm ²

Related Product

Other InSb

InP

GaAs

GaSb

Wafer Box

Film Coater

RTP Furnaces

Product Information

Shipping & Returns

Description

10x10x0.45 mm InSb wafer (N type, Te doped)

Size: 5x5x0.3 mm
Orientation <100> +/-0.5^o with two reference flats
Polishing: one-side side polishd ( back side etched )
Packing: Sealed under nitrogen with single wafer comtainer in 1000 class clean room

Properties

Growth method LEC
Orientation (100) +/- 0.5^o
Doping Te doped
Conductivity type N type
Carrier Concentration (0.19- 0.5)E18 @77K
Mobility >(3.58-5.6)E4 cm²/Vs
EPD <1200 - 1500 / cm ²

Related Product

Other InSb

InP

GaAs

GaSb

Wafer Box

Film Coater

RTP Furnaces

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