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High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD

High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD

High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD

VTC-PECVD is a CCP type ( Capacitively Coupled Plasma) plasma-enhanced chemical vapor deposition (PECVD) system with a high vacuum chamber. It is designed for plasma-assisted thin-film coating at lowered temperature (200 ~ 500°C), compared to the normal deposition at 700~950°C. The high vacuum chamber also provides a clean environment which greatly improves the film size, uniformity, and film quality.

SPECIFICATIONS

Power	Single-phase 208 - 240 VAC 50 / 60 Hz 4000 W
Source Power	One 300 W, 13.56 MHz frequency RF power source with auto coupling.
PECVD Growth	100 mm Dia. double layer shower head with RF source for 4" wafer Two precision mass flow controllers (MFCs) for two types of working gas Flow rate: 0 – 100 mL/min adjustable on the touch screen control panel Motorized butterfly valves allow a stable working deposition pressure from 0.1 torrs to 1 torr
Vacuum Chamber	Made of 304 stainless steel Dimension: Dia 300 mm × 300 m H Ultimate vacuum: 6E-7 torr Pumping time: <6E-6 torr after 40 min pumping with turbopump Leak rate: 3.8E-9 torr L/s Viewport: 100 mm dia. glass Fast load-lock door for quick sample loadding and retrieval.
Vacuum Pump	Turbo Pump: 700 L/s Pfeiffer turbo pump Backing Pump: 240 L/min (4L/s) rotoray vane pump
Sample Stage	The sample holder is a rotatable and heatable stage made of the ceramic heater with copper cover Sample holder size: 100 mm Dia. for. 4" wafer max Rotation speed: 1 - 20 rpm adjustable for uniform coating The holder temperature is PID controlled from RT to 500 °C max with an accuracy of +/- 1.0 °C Clearance: 15 ~ 65 mm between sample stage and plasma head
Water Chiller	One digital temperature-controlled recirculating water chiller is included. (Click picture to see details) Refrigeration range: 5~35 °C Flow rate: 16 L/min Pump pressure: 14 psi
Gas delivery system (optional)	2- 9 channel gas mixing and delivery system is available as an option ( Pic. 1) Vapor gas delivery device is available upon request (Pic. 2&3) Programmable software for customized recipes is available based on customer design Pic. 1Pic. 2Pic.3
Net Weight of Coater	160 kg
Dimensions
Compliance	CE approval NRTL Certification (UL 1450) is available upon request at an extra cost
Warranty	One year limited warranty with lifetime support
Operation Demo Video

$99,998.00

High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD—

$99,998.00

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High Vacuum Plasma-enhanced Chemical Vapor Deposition (CCP type) - VTC-PECVD

VTC-PECVD is a CCP type ( Capacitively Coupled Plasma) plasma-enhanced chemical vapor deposition (PECVD) system with a high vacuum chamber. It is designed for plasma-assisted thin-film coating at lowered temperature (200 ~ 500°C), compared to the normal deposition at 700~950°C. The high vacuum chamber also provides a clean environment which greatly improves the film size, uniformity, and film quality.

SPECIFICATIONS

Power	Single-phase 208 - 240 VAC 50 / 60 Hz 4000 W
Source Power	One 300 W, 13.56 MHz frequency RF power source with auto coupling.
PECVD Growth	100 mm Dia. double layer shower head with RF source for 4" wafer Two precision mass flow controllers (MFCs) for two types of working gas Flow rate: 0 – 100 mL/min adjustable on the touch screen control panel Motorized butterfly valves allow a stable working deposition pressure from 0.1 torrs to 1 torr
Vacuum Chamber	Made of 304 stainless steel Dimension: Dia 300 mm × 300 m H Ultimate vacuum: 6E-7 torr Pumping time: <6E-6 torr after 40 min pumping with turbopump Leak rate: 3.8E-9 torr L/s Viewport: 100 mm dia. glass Fast load-lock door for quick sample loadding and retrieval.
Vacuum Pump	Turbo Pump: 700 L/s Pfeiffer turbo pump Backing Pump: 240 L/min (4L/s) rotoray vane pump
Sample Stage	The sample holder is a rotatable and heatable stage made of the ceramic heater with copper cover Sample holder size: 100 mm Dia. for. 4" wafer max Rotation speed: 1 - 20 rpm adjustable for uniform coating The holder temperature is PID controlled from RT to 500 °C max with an accuracy of +/- 1.0 °C Clearance: 15 ~ 65 mm between sample stage and plasma head
Water Chiller	One digital temperature-controlled recirculating water chiller is included. (Click picture to see details) Refrigeration range: 5~35 °C Flow rate: 16 L/min Pump pressure: 14 psi
Gas delivery system (optional)	2- 9 channel gas mixing and delivery system is available as an option ( Pic. 1) Vapor gas delivery device is available upon request (Pic. 2&3) Programmable software for customized recipes is available based on customer design Pic. 1Pic. 2Pic.3
Net Weight of Coater	160 kg
Dimensions
Compliance	CE approval NRTL Certification (UL 1450) is available upon request at an extra cost
Warranty	One year limited warranty with lifetime support
Operation Demo Video

Product Information

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Description

VTC-PECVD is a CCP type ( Capacitively Coupled Plasma) plasma-enhanced chemical vapor deposition (PECVD) system with a high vacuum chamber. It is designed for plasma-assisted thin-film coating at lowered temperature (200 ~ 500°C), compared to the normal deposition at 700~950°C. The high vacuum chamber also provides a clean environment which greatly improves the film size, uniformity, and film quality.

SPECIFICATIONS

Power	Single-phase 208 - 240 VAC 50 / 60 Hz 4000 W
Source Power	One 300 W, 13.56 MHz frequency RF power source with auto coupling.
PECVD Growth	100 mm Dia. double layer shower head with RF source for 4" wafer Two precision mass flow controllers (MFCs) for two types of working gas Flow rate: 0 – 100 mL/min adjustable on the touch screen control panel Motorized butterfly valves allow a stable working deposition pressure from 0.1 torrs to 1 torr
Vacuum Chamber	Made of 304 stainless steel Dimension: Dia 300 mm × 300 m H Ultimate vacuum: 6E-7 torr Pumping time: <6E-6 torr after 40 min pumping with turbopump Leak rate: 3.8E-9 torr L/s Viewport: 100 mm dia. glass Fast load-lock door for quick sample loadding and retrieval.
Vacuum Pump	Turbo Pump: 700 L/s Pfeiffer turbo pump Backing Pump: 240 L/min (4L/s) rotoray vane pump
Sample Stage	The sample holder is a rotatable and heatable stage made of the ceramic heater with copper cover Sample holder size: 100 mm Dia. for. 4" wafer max Rotation speed: 1 - 20 rpm adjustable for uniform coating The holder temperature is PID controlled from RT to 500 °C max with an accuracy of +/- 1.0 °C Clearance: 15 ~ 65 mm between sample stage and plasma head
Water Chiller	One digital temperature-controlled recirculating water chiller is included. (Click picture to see details) Refrigeration range: 5~35 °C Flow rate: 16 L/min Pump pressure: 14 psi
Gas delivery system (optional)	2- 9 channel gas mixing and delivery system is available as an option ( Pic. 1) Vapor gas delivery device is available upon request (Pic. 2&3) Programmable software for customized recipes is available based on customer design Pic. 1Pic. 2Pic.3
Net Weight of Coater	160 kg
Dimensions
Compliance	CE approval NRTL Certification (UL 1450) is available upon request at an extra cost
Warranty	One year limited warranty with lifetime support
Operation Demo Video

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