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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um
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GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um

GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um

GaN Ā Template on saphhireĀ isĀ made byĀ a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

  • Sizes 5mmx5mm
  • Substrate Sapphire,Ā  OrientationĀ R (00.1) +/-Ā 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90%Ā 
  • Edge Exclusion Area 1mm
  • Package Single Wafer Container
  • GaN layer thicknessĀ Ā  5 microns , (=/- 10%)
  • Please click here to seeĀ XRD Rocking curve of GaN template
  • Please click here to seeĀ Dislocation vs Thickness of GaN template
  • Please click here to seeĀ RMS of GaN template



Ā 


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$55.65

Original: $159.00

-65%
GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5umā€”

$159.00

$55.65

GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um

GaN Ā Template on saphhireĀ isĀ made byĀ a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

  • Sizes 5mmx5mm
  • Substrate Sapphire,Ā  OrientationĀ R (00.1) +/-Ā 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90%Ā 
  • Edge Exclusion Area 1mm
  • Package Single Wafer Container
  • GaN layer thicknessĀ Ā  5 microns , (=/- 10%)
  • Please click here to seeĀ XRD Rocking curve of GaN template
  • Please click here to seeĀ Dislocation vs Thickness of GaN template
  • Please click here to seeĀ RMS of GaN template



Ā 


Related Products

Thin Films Ā A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Product Information

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Description

GaN Ā Template on saphhireĀ isĀ made byĀ a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

  • Sizes 5mmx5mm
  • Substrate Sapphire,Ā  OrientationĀ R (00.1) +/-Ā 1.0 o
  • Conduction Type: n-type,
  • Resistivity < 0.5 Ohm-cm
  • Front Surface Finish (Ga Face) As-grown
  • Back Surface Finish Sapphire as-received finish
  • Useable Surface Area >90%Ā 
  • Edge Exclusion Area 1mm
  • Package Single Wafer Container
  • GaN layer thicknessĀ Ā  5 microns , (=/- 10%)
  • Please click here to seeĀ XRD Rocking curve of GaN template
  • Please click here to seeĀ Dislocation vs Thickness of GaN template
  • Please click here to seeĀ RMS of GaN template



Ā 


Related Products

Thin Films Ā A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater
GaN Template on Sapphire(11-02) , 5 x 5 mm x 0.5mm ,1sp, GaN film: 5um - FmGaNonALR050505S1FT5um | MTI Online Store