GaN Template on Sapphire(0001) 2"x 0.5mm,1sp ,GaN Film: 20um ,Semi-insulated--Research Grade

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN.  GaN template is a cost effective way to replace GaN single crystal substrate.

Specifications

        Research Grade

• Sizes 2” Round
• Dimensions 50mm +/- 2mm
• Substrate Sapphire,  Orientation c-axis (0001) +/- 1.0 ^o
• Conduction Type: n-type,
• Resistivity > 1E6 Ohm-cm
• Front Surface Finish (Ga Face) As-grown
• Back Surface Finish Sapphire as-received finish
• Useable Surface Area >90%
• Edge Exclusion Area 1mm
• Package Single Wafer Container
• GaN layer thickness   20 microns , (+/- 10%)

Macro Defect Density:            <=10 cm^-2
Lattice Constant Mismatch:   14%  mismatch
Dislocation Density:              5x10^9/ cm^2

Related data

• Please click here to see XRD Rocking curve of GaN template
• Please click here to see Dislocation vs Thickness of GaN template

 

Related Products

Thin Films  A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater