GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
- Sizes 2” Round
- Dimensions 50.8mm +/- 0.25mm
- Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
- Substrate Sapphirethickness: 0.43mm+/-0.025mm
Conduction Type: N-type, - Resistivity < 0.5 Ohm-cm
- Front Surface Finish (Ga Face) As-grown
- Back Surface Finish Sapphire as-received finish
- Useable Surface Area >90%
- Edge Exclusion Area 1mm
Dislocation Density: <5x10^8 cm^−2
- Package Single Wafer Container
- GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
- Please click here to see RMS of GaN template
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Original: $945.00
-65%$945.00
$330.75More Images
GaN Template on Sapphire (0001), N type undoped, 2" Dia. x 0.43 - 0.5mm, 1sp, GaN Film:4 - 5 micron
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
- Sizes 2” Round
- Dimensions 50.8mm +/- 0.25mm
- Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
- Substrate Sapphirethickness: 0.43mm+/-0.025mm
Conduction Type: N-type, - Resistivity < 0.5 Ohm-cm
- Front Surface Finish (Ga Face) As-grown
- Back Surface Finish Sapphire as-received finish
- Useable Surface Area >90%
- Edge Exclusion Area 1mm
Dislocation Density: <5x10^8 cm^−2
- Package Single Wafer Container
- GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
- Please click here to see RMS of GaN template
Related Products
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
-GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate.
Specifications
- Sizes 2” Round
- Dimensions 50.8mm +/- 0.25mm
- Substrate Sapphire, Orientation c-axis (0001) +/- 1.0 o
- Substrate Sapphirethickness: 0.43mm+/-0.025mm
Conduction Type: N-type, - Resistivity < 0.5 Ohm-cm
- Front Surface Finish (Ga Face) As-grown
- Back Surface Finish Sapphire as-received finish
- Useable Surface Area >90%
- Edge Exclusion Area 1mm
Dislocation Density: <5x10^8 cm^−2
- Package Single Wafer Container
- GaN layer thickness 4-5 microns , (+/- 10%) with roughness: ~5 nm RMS
Related data
- Please click here to see XRD Rocking curve of GaN template
- Please click here to see Dislocation vs Thickness of GaN template
- Please click here to see RMS of GaN template
Related Products
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
