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GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um

GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um

GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

Size : 10mmx10mm
Substrate Sapphire, Orientation C (0001) +/- 1.0^o
Conduction Type: n-type,
Resistivity < 0.5 Ohm-cm
Front Surface Finish (Ga Face) As-grown
Back Surface Finish Sapphire as-received finish
Useable Surface Area >90%
Edge Exclusion Area 1mm
Package Single Wafer Container
GaN layer thickness 4-5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

Related data

Please click here to see XRD Rocking curve of GaN template
Please click here to see Dislocation vs Thickness of GaN template
Please click here to see RMS of GaN template

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

$279.00

GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um—

$279.00

GaN Template on Sapphire(0001) 10 x 10 mm x 0.43mm,1sp .GaN Film:4- 5um

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

Size : 10mmx10mm
Substrate Sapphire, Orientation C (0001) +/- 1.0^o
Conduction Type: n-type,
Resistivity < 0.5 Ohm-cm
Front Surface Finish (Ga Face) As-grown
Back Surface Finish Sapphire as-received finish
Useable Surface Area >90%
Edge Exclusion Area 1mm
Package Single Wafer Container
GaN layer thickness 4-5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

Related data

Please click here to see XRD Rocking curve of GaN template
Please click here to see Dislocation vs Thickness of GaN template
Please click here to see RMS of GaN template

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

Product Information

Shipping & Returns

Description

GaN Template on saphhire is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template is a cost effective way to replace GaN single crystal substrate

Specifications

Size : 10mmx10mm
Substrate Sapphire, Orientation C (0001) +/- 1.0^o
Conduction Type: n-type,
Resistivity < 0.5 Ohm-cm
Front Surface Finish (Ga Face) As-grown
Back Surface Finish Sapphire as-received finish
Useable Surface Area >90%
Edge Exclusion Area 1mm
Package Single Wafer Container
GaN layer thickness 4-5 microns , (=/- 10%) with roughness: ~10 nm RMS as measured by the Wyko (white light interferometer) for 50 umx50 um area

Related data

Please click here to see XRD Rocking curve of GaN template
Please click here to see Dislocation vs Thickness of GaN template
Please click here to see RMS of GaN template

Related Products


Thin Films A-Z	Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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