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GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.5 mm, 1sp
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GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.5 mm, 1sp

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.5 mm, 1sp

GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 
  • Research Grade , about 90 % useful  area
  • Nominal GaN thickness:           0.5μm ± 0.1 μm
  • Front Surface finish (Ga-face):   <1nm RMS,  As-grown 
  • Back surface finish:                  as received
  • GaN orientation:                       C-plane (00.1)
  • Polarity:                                   Ga-face
  • Conduction Type:                     Undoped (N-)
  • Macro Defect Density:              <5/cm^2
  • Wafer base:                             Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.5mm, one side polished
  • There is ~200nm AlN buffer layer between the silicon and GaN 

Related data
  • Please click here to see XRD Rocking curve of GaN template
  • Please click here to see Dislocation vs Thickness of GaN template

 

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$295.75

Original: $845.00

-65%
GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.5 mm, 1sp—

$845.00

$295.75

GaN Template on 2" Silicon Wafer, GaN film(500nm), N type, undoped on Si (111) substrates, 2"x 0.5 mm, 1sp

GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 
  • Research Grade , about 90 % useful  area
  • Nominal GaN thickness:           0.5μm ± 0.1 μm
  • Front Surface finish (Ga-face):   <1nm RMS,  As-grown 
  • Back surface finish:                  as received
  • GaN orientation:                       C-plane (00.1)
  • Polarity:                                   Ga-face
  • Conduction Type:                     Undoped (N-)
  • Macro Defect Density:              <5/cm^2
  • Wafer base:                             Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.5mm, one side polished
  • There is ~200nm AlN buffer layer between the silicon and GaN 

Related data
  • Please click here to see XRD Rocking curve of GaN template
  • Please click here to see Dislocation vs Thickness of GaN template

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

Product Information

Shipping & Returns

Description

GaN  Template on silicon is made by a hydride vapor phase epitaxy (HVPE)-based method. During the HVPE process, HCl reacts with molten Ga to form GaCl, which in turn reacts with NH3 to form GaN. GaN template on silicon is a cost effective way to replace GaN single crystal substrate.

Specifications: 
  • Research Grade , about 90 % useful  area
  • Nominal GaN thickness:           0.5μm ± 0.1 μm
  • Front Surface finish (Ga-face):   <1nm RMS,  As-grown 
  • Back surface finish:                  as received
  • GaN orientation:                       C-plane (00.1)
  • Polarity:                                   Ga-face
  • Conduction Type:                     Undoped (N-)
  • Macro Defect Density:              <5/cm^2
  • Wafer base:                             Silicon [111], N type, P doped, Res: 1-10 ohm-cm, 2" diameter x 0.5mm, one side polished
  • There is ~200nm AlN buffer layer between the silicon and GaN 

Related data
  • Please click here to see XRD Rocking curve of GaN template
  • Please click here to see Dislocation vs Thickness of GaN template

 

Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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