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8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8
8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8
PCE-8 is a plasma cleaner or etching unit with 8.5 "Dia x 14“"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma. The rate of organic removal is about 20 nm/min Maximum at high RF power. It is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve better quality. If you do not have experience for plasma surface cleaning, please refer to the articles as follows. It also can be used as a plasma etcher at higher RF power.
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McIntire, Theresa M., S. Rachelle Smalley, John T. Newberg, A. Scott Lea, John C. Hemminger, Barbara J. Finlayson-Pitts. "Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon." Langmuir (2006) 22(13): 5617-5624.
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Sumner, Ann Louise, Erik J. Menke, Yael Dubowski, John T. Newberg, etc. "The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere." Phys. Chem. Chem. Phys. (2004) 6: 604-613.
- Mennicke, Ulrike, Tim Salditt. "Preparation of Solid-Supported Lipid Bilayers by Spin-Coating." Langmuir (2002) 18: 8172-8177.
SPECIFICATIONS
$29,985.00
8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8—
$29,985.00
8.5" RF Plasma Cleaner / Etcher with Vacuum Pump. (12 Liter, 13.56 Mhz, 80W max.) - EQ-PCE-8
PCE-8 is a plasma cleaner or etching unit with 8.5 "Dia x 14“"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma. The rate of organic removal is about 20 nm/min Maximum at high RF power. It is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve better quality. If you do not have experience for plasma surface cleaning, please refer to the articles as follows. It also can be used as a plasma etcher at higher RF power.
-
McIntire, Theresa M., S. Rachelle Smalley, John T. Newberg, A. Scott Lea, John C. Hemminger, Barbara J. Finlayson-Pitts. "Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon." Langmuir (2006) 22(13): 5617-5624.
-
Sumner, Ann Louise, Erik J. Menke, Yael Dubowski, John T. Newberg, etc. "The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere." Phys. Chem. Chem. Phys. (2004) 6: 604-613.
- Mennicke, Ulrike, Tim Salditt. "Preparation of Solid-Supported Lipid Bilayers by Spin-Coating." Langmuir (2002) 18: 8172-8177.
SPECIFICATIONS
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Description
PCE-8 is a plasma cleaner or etching unit with 8.5 "Dia x 14“"Length quartz chamber and 0 - 80W variable RF power. It is designed to clean and remove nano-scale organic contamination on the substrate or wafer up to 8" using air, oxygen, or argon plasma. The rate of organic removal is about 20 nm/min Maximum at high RF power. It is an excellent tool to pre-clean single crystal substrate before epitaxial film deposition to achieve better quality. If you do not have experience for plasma surface cleaning, please refer to the articles as follows. It also can be used as a plasma etcher at higher RF power.
-
McIntire, Theresa M., S. Rachelle Smalley, John T. Newberg, A. Scott Lea, John C. Hemminger, Barbara J. Finlayson-Pitts. "Substrate Changes Associated with the Chemistry of Self-Assembled Monolayers on Silicon." Langmuir (2006) 22(13): 5617-5624.
-
Sumner, Ann Louise, Erik J. Menke, Yael Dubowski, John T. Newberg, etc. "The Nature of Water on Surfaces of Laboratory Systems and Implications for Heterogeneous Chemistry in the Troposphere." Phys. Chem. Chem. Phys. (2004) 6: 604-613.
- Mennicke, Ulrike, Tim Salditt. "Preparation of Solid-Supported Lipid Bilayers by Spin-Coating." Langmuir (2002) 18: 8172-8177.
SPECIFICATIONS
