ZnO (11-20) A-plane 10x10x0.5mm, 1sp - ZOA101005S1
- Single crystal ZnO
- Size: 10mm x 10mm x 0.5mm
- Orientation: (11-20) +/- 0.5 o, A-plane
- Polish: One side polished (1sp)
- Surface Roughness: < 5 A
- Packed in 1000 class clean room with 100 class plastic bag
Typical Properties
|
Purity wt% Impurity: wt% |
> 99.99 |
Crystal Structure |
Hexagonal: a= 3.252Å, c = 5.313Å |
Growth Method |
Hydrothermal |
Hardness |
4 moh scale |
Density |
5.7 g/cm3 |
Melt Point |
1975 oC |
Specific Heat |
0.125 cal/gm |
Thermoelectric Constant |
1200 mV /oK @ 300 oC |
Thermal Conductivity |
0.006 cal/cm/ oK |
Thermal Expansion |
2.90 x 10-6/oK |
Transmission Range |
0.4 - 0.6 m > 50% at 2 mm |
Dislocation Density |
<0001> plane <100 / cm2 |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
Original: $455.00
-65%$455.00
$159.25ZnO (11-20) A-plane 10x10x0.5mm, 1sp - ZOA101005S1
- Single crystal ZnO
- Size: 10mm x 10mm x 0.5mm
- Orientation: (11-20) +/- 0.5 o, A-plane
- Polish: One side polished (1sp)
- Surface Roughness: < 5 A
- Packed in 1000 class clean room with 100 class plastic bag
Typical Properties
|
Purity wt% Impurity: wt% |
> 99.99 |
Crystal Structure |
Hexagonal: a= 3.252Å, c = 5.313Å |
Growth Method |
Hydrothermal |
Hardness |
4 moh scale |
Density |
5.7 g/cm3 |
Melt Point |
1975 oC |
Specific Heat |
0.125 cal/gm |
Thermoelectric Constant |
1200 mV /oK @ 300 oC |
Thermal Conductivity |
0.006 cal/cm/ oK |
Thermal Expansion |
2.90 x 10-6/oK |
Transmission Range |
0.4 - 0.6 m > 50% at 2 mm |
Dislocation Density |
<0001> plane <100 / cm2 |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Single crystal ZnO
- Size: 10mm x 10mm x 0.5mm
- Orientation: (11-20) +/- 0.5 o, A-plane
- Polish: One side polished (1sp)
- Surface Roughness: < 5 A
- Packed in 1000 class clean room with 100 class plastic bag
Typical Properties
|
Purity wt% Impurity: wt% |
> 99.99 |
Crystal Structure |
Hexagonal: a= 3.252Å, c = 5.313Å |
Growth Method |
Hydrothermal |
Hardness |
4 moh scale |
Density |
5.7 g/cm3 |
Melt Point |
1975 oC |
Specific Heat |
0.125 cal/gm |
Thermoelectric Constant |
1200 mV /oK @ 300 oC |
Thermal Conductivity |
0.006 cal/cm/ oK |
Thermal Expansion |
2.90 x 10-6/oK |
Transmission Range |
0.4 - 0.6 m > 50% at 2 mm |
Dislocation Density |
<0001> plane <100 / cm2 |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
