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ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2
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ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2

ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2

Specifications:
  • Single crystal ZnO
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (0001) +/-0.5 o
  • Polish: two sides EPI polished
  • Average Surface Roughness Ra:  < 5A RMS

Typical Properties

Purity wt%

Impurity: wt%

> 99.99

Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002

Crystal Structure

Hexagonal: a= 3.252Å, c = 5.313Å

Growth Method

Hydrothermal

Hardness

4 moh scale

Density

5.7 g/cm3

Melt Point

1975 oC

Specific Heat

0.125 cal/gm

Thermoelectric Constant

1200 mV /oK @ 300 oC

Thermal Conductivity

0.006 cal/cm/ oK

Thermal Expansion

2.90 x 10-6/oK

Transmission Range

0.4 - 0.6 m > 50% at 2 mm

Dislocation Density

<0001> plane <100 / cm2

 


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$181.65

Original: $519.00

-65%
ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2—

$519.00

$181.65

ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2

Specifications:
  • Single crystal ZnO
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (0001) +/-0.5 o
  • Polish: two sides EPI polished
  • Average Surface Roughness Ra:  < 5A RMS

Typical Properties

Purity wt%

Impurity: wt%

> 99.99

Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002

Crystal Structure

Hexagonal: a= 3.252Å, c = 5.313Å

Growth Method

Hydrothermal

Hardness

4 moh scale

Density

5.7 g/cm3

Melt Point

1975 oC

Specific Heat

0.125 cal/gm

Thermoelectric Constant

1200 mV /oK @ 300 oC

Thermal Conductivity

0.006 cal/cm/ oK

Thermal Expansion

2.90 x 10-6/oK

Transmission Range

0.4 - 0.6 m > 50% at 2 mm

Dislocation Density

<0001> plane <100 / cm2

 


Related Products

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

 


Product Information

Shipping & Returns

Description

Specifications:
  • Single crystal ZnO
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (0001) +/-0.5 o
  • Polish: two sides EPI polished
  • Average Surface Roughness Ra:  < 5A RMS

Typical Properties

Purity wt%

Impurity: wt%

> 99.99

Mg: <.0005 Al: < .0030 Si: 0.0030 Ti: .0010 Cu: < .0030 Fe: < 0.005 Ca: <.0005 Ag: < .0002

Crystal Structure

Hexagonal: a= 3.252Å, c = 5.313Å

Growth Method

Hydrothermal

Hardness

4 moh scale

Density

5.7 g/cm3

Melt Point

1975 oC

Specific Heat

0.125 cal/gm

Thermoelectric Constant

1200 mV /oK @ 300 oC

Thermal Conductivity

0.006 cal/cm/ oK

Thermal Expansion

2.90 x 10-6/oK

Transmission Range

0.4 - 0.6 m > 50% at 2 mm

Dislocation Density

<0001> plane <100 / cm2

 


Related Products

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater

 


ZnO (0001) 10x10x0.5mm, 2sp - ZOZ101005S2 | MTI Online Store