YSZ (111) 1"x1"x0.5mm, 1SP
- Single crystal: YSZ
- Size: 1" x 1" x 0.5 mm +/-0.05 mm
- Orientation: (111) +/-0.5 Deg
- Polish: one side polished, polished by CMP technology
- Surface roughness: < 5A RMS by AFM
Chemical Formula |
Y2O3 stabilized ZrO2, 8 % mole Y2O3 |
Crystal Structure |
Cubic, Face Centered, CaF2 type |
Unit Cell |
a = 5.125 A |
Density |
5.8 g / cc |
Melting Point |
2500 oC |
Thermal Expansion Coeff. |
10.3 ppm / oC |
Dielectric Constant |
27 |
Flux Technique |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
YSZ (111) 1"x1"x0.5mm, 1SP
- Single crystal: YSZ
- Size: 1" x 1" x 0.5 mm +/-0.05 mm
- Orientation: (111) +/-0.5 Deg
- Polish: one side polished, polished by CMP technology
- Surface roughness: < 5A RMS by AFM
Chemical Formula |
Y2O3 stabilized ZrO2, 8 % mole Y2O3 |
Crystal Structure |
Cubic, Face Centered, CaF2 type |
Unit Cell |
a = 5.125 A |
Density |
5.8 g / cc |
Melting Point |
2500 oC |
Thermal Expansion Coeff. |
10.3 ppm / oC |
Dielectric Constant |
27 |
Flux Technique |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Single crystal: YSZ
- Size: 1" x 1" x 0.5 mm +/-0.05 mm
- Orientation: (111) +/-0.5 Deg
- Polish: one side polished, polished by CMP technology
- Surface roughness: < 5A RMS by AFM
Chemical Formula |
Y2O3 stabilized ZrO2, 8 % mole Y2O3 |
Crystal Structure |
Cubic, Face Centered, CaF2 type |
Unit Cell |
a = 5.125 A |
Density |
5.8 g / cc |
Melting Point |
2500 oC |
Thermal Expansion Coeff. |
10.3 ppm / oC |
Dielectric Constant |
27 |
Flux Technique |
Related Products
|
|
|
|
|
Other Crystal Wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing Saw |
Film Coater |
