Thermal Oxide Wafer: 50 nm SiO2 Layer on Si (100), 2" dia x 0.30 mm t, N type , undoped, R>1000 ohm-cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 2" Silicon wafer
• Oxide layer thickness: 50 nm   ( 500A)  +/-10%
• Refractive index - 1.455

Silicon Wafer Specifications:

• Conductive type:          N- type/ Un- doped 
• Resistivity:                  >1000 ohm-cm
• Size:                          50.8 diameter +/- 0.5 mm x 0.3 +/- 0.025 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughnessm, Ra: < 5A(RMS)

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