Thermal Oxide Wafer: 100 nm SiO2 Layer on Si (100), 4"dia x 0.525 mm t, P-type ,B-doped 1SP R:0.001- 0.005 ohm.cm

Thermal oxide Layer

• Research Grade , about 80 % useful  area
  
• SiO2 layer on 4" Silicon wafer
• Oxide layer thickness: 100 nm   ( 2000A)  +/-10%
• Refractive index - 1.455

• Conductive type:          P-ype/ B-dped 
• Resistivity:                0.001- 0.005 ohm.cm
• Size:                         4" +/- 0.5 mm x 0.5 mm
• Orientation:                (100) +/- 1^o
• Polish:                        one side polished
• Surface roughness:      < 5A

• Optional:  you may need tool below to handle the wafer ( click picture to order )

  Diamond Scriber for Cutting Single Crystal Substrate - DS-01	Micro-Fiber & Dust Free Wiper, 4"x4", 100 pcs/bag - Wiper-yx-2001	Vacuum Pen SMT-150C (NEW) - EQ-SMT-150C	Single Wafer Containers