🚚 Free Worldwide Shipping on All Orders!Shop Now
TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2
HomeStore

TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2

TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2

  • Single crystal TeO2
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (110)
  • Polish: two sides EPI polished.
  • Surface Roughness Ra: < 5A RMS
  • For detailed physical properties, please click here
Typical Properties
 

            Crystal Structure:                                 Tetragonal, a= 4.810 Å       c=7.613 Å          

            Melting point:                                      730 oC

            Density:                                              5.99 g / cc

            Hardness:                                           4.5 Mohs

            Photo-elastic Coeff. ( 632.8nm):            P11=0.074, P13= 0340, P31= 0.091, P33=0.240

            Refractive inde:                                                h=2.18           he = 2.32

            A-O Figure of Merit:                              M2    793         x 10-18  S3/g

            Transparency range:                             350 ~ 500 nm

            Transitivity:                                          > 70% at 632.8 nm

            Gradient of refractive index :                 < 5 x 10-5 /cm        

            Phase velocity:                                     616  m/s

            Crystalgrowth method :                                CZ and Bridgman

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater



 

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater


$47.25

Original: $135.00

-65%
TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2

$135.00

$47.25

TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2

  • Single crystal TeO2
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (110)
  • Polish: two sides EPI polished.
  • Surface Roughness Ra: < 5A RMS
  • For detailed physical properties, please click here
Typical Properties
 

            Crystal Structure:                                 Tetragonal, a= 4.810 Å       c=7.613 Å          

            Melting point:                                      730 oC

            Density:                                              5.99 g / cc

            Hardness:                                           4.5 Mohs

            Photo-elastic Coeff. ( 632.8nm):            P11=0.074, P13= 0340, P31= 0.091, P33=0.240

            Refractive inde:                                                h=2.18           he = 2.32

            A-O Figure of Merit:                              M2    793         x 10-18  S3/g

            Transparency range:                             350 ~ 500 nm

            Transitivity:                                          > 70% at 632.8 nm

            Gradient of refractive index :                 < 5 x 10-5 /cm        

            Phase velocity:                                     616  m/s

            Crystalgrowth method :                                CZ and Bridgman

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater



 

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater


Product Information

Shipping & Returns

Description

  • Single crystal TeO2
  • Size: 10mm x 10mm x 0.5mm
  • Orientation: (110)
  • Polish: two sides EPI polished.
  • Surface Roughness Ra: < 5A RMS
  • For detailed physical properties, please click here
Typical Properties
 

            Crystal Structure:                                 Tetragonal, a= 4.810 Å       c=7.613 Å          

            Melting point:                                      730 oC

            Density:                                              5.99 g / cc

            Hardness:                                           4.5 Mohs

            Photo-elastic Coeff. ( 632.8nm):            P11=0.074, P13= 0340, P31= 0.091, P33=0.240

            Refractive inde:                                                h=2.18           he = 2.32

            A-O Figure of Merit:                              M2    793         x 10-18  S3/g

            Transparency range:                             350 ~ 500 nm

            Transitivity:                                          > 70% at 632.8 nm

            Gradient of refractive index :                 < 5 x 10-5 /cm        

            Phase velocity:                                     616  m/s

            Crystalgrowth method :                                CZ and Bridgman

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater



 

Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater


TeO2 (110) 10x10x0.5mm, 2sp - TeOe101005S2 | MTI Online Store