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TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1

TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1

TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1

Single crystal TeO2
Size: 10mm x 10mm x 0.5mm
Orientation: (110)
Polish: one side EPI polished.
Surface Roughness Ra: < 5A RMS
For detailed physical properties, please click here

Typical Properties

Crystal Structure: Tetragonal, a= 4.810 Å c=7.613 Å

Melting point: 730 ^oC

Density: 5.99 g / cc

Hardness: 4.5 Mohs

Photo-elastic Coeff. ( 632.8nm): P₁₁=0.074, P₁₃= 0340, P₃₁= 0.091, P₃₃=0.240

Refractive inde: h_o=2.18 h_e= 2.32

A-O Figure of Merit: M₂ 793 x 10^-18 S³/g

Transparency range: 350 ~ 500 nm

Transitivity: > 70% at 632.8 nm

Gradient of refractive index : < 5 x 10^-5 /cm

Phase velocity: 616 m/s

Crystalgrowth method : CZ and Bridgman

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Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

$40.25

Original: $115.00

-65%

TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1—

$115.00

$40.25

TeO2 (110) 10x10x0.5mm, 1sp - TeOe101005S1

Single crystal TeO2
Size: 10mm x 10mm x 0.5mm
Orientation: (110)
Polish: one side EPI polished.
Surface Roughness Ra: < 5A RMS
For detailed physical properties, please click here

Typical Properties

Crystal Structure: Tetragonal, a= 4.810 Å c=7.613 Å

Melting point: 730 ^oC

Density: 5.99 g / cc

Hardness: 4.5 Mohs

Photo-elastic Coeff. ( 632.8nm): P₁₁=0.074, P₁₃= 0340, P₃₁= 0.091, P₃₃=0.240

Refractive inde: h_o=2.18 h_e= 2.32

A-O Figure of Merit: M₂ 793 x 10^-18 S³/g

Transparency range: 350 ~ 500 nm

Transitivity: > 70% at 632.8 nm

Gradient of refractive index : < 5 x 10^-5 /cm

Phase velocity: 616 m/s

Crystalgrowth method : CZ and Bridgman

Related Product


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

Product Information

Shipping & Returns

Description

Single crystal TeO2
Size: 10mm x 10mm x 0.5mm
Orientation: (110)
Polish: one side EPI polished.
Surface Roughness Ra: < 5A RMS
For detailed physical properties, please click here

Typical Properties

Crystal Structure: Tetragonal, a= 4.810 Å c=7.613 Å

Melting point: 730 ^oC

Density: 5.99 g / cc

Hardness: 4.5 Mohs

Photo-elastic Coeff. ( 632.8nm): P₁₁=0.074, P₁₃= 0340, P₃₁= 0.091, P₃₃=0.240

Refractive inde: h_o=2.18 h_e= 2.32

A-O Figure of Merit: M₂ 793 x 10^-18 S³/g

Transparency range: 350 ~ 500 nm

Transitivity: > 70% at 632.8 nm

Gradient of refractive index : < 5 x 10^-5 /cm

Phase velocity: 616 m/s

Crystalgrowth method : CZ and Bridgman

Related Product


Other Crystal wafer A-Z	Plasma Cleaner	Wafer Containers	Dicing saw	Film Coater

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