Name: Quartz X-cut, 2" dia x 0.5mm, 2 sp - SOX50D05C2
Brand: MTI Online Store
SKU: sox50d05c2
Availability: InStock

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Quartz X-cut, 2" dia x 0.5mm, 2 sp - SOX50D05C2

Single crystal SiO2 (quartz)
Size: 2" diameter x 0.5 mm
Orientation: X-cut
Polish: two sides polished
Surface roughness: < 5 A (by AFM)
Packing: in 1000 class clean room by wafer carrier
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. MTI can provide high quality quartz wafers for both research and industries production at the lowest price.

	Typical Physical Properties
Purity Wt %	Saw grade: > 99.9 Optical grade: 99.99
Crystal Structure	Hex. a= 4.914 Å c = 5.405 Å
Growth Method	Hydrothermal
Hardness	7.0 Moh’s
Density	2.684 g/cm³
Melt Point	1610 ^oC ( phase transition point: 573.1^oC)
Specific Heat	0.18 cal/gm
Thermoelectric Constant	1200 mV/^oC @ 300 ^oC
Thermal Conductivity	0.0033 cal/cm/^oC
Thermal Expansion (x10^-6/ ^oC)	a₁₁: 13.71 a₃₃: 7.48
Index of Refraction	1.544
Q Value Acoustic Velocity, SAW Frequency Constant, BAW Piezoelectric Coupling	1.8 x 10⁶ min. 3160 ( m/sec ) 1661 ( kHz/mm ) K² (%) BAW: 0.65 SAW: 0.14
Inclusion	IEC Grade II

choose other quartz substrate

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Wafer Carrier Box

$48.65

Original: $139.00

-65%

Quartz X-cut, 2" dia x 0.5mm, 2 sp - SOX50D05C2—

$139.00

$48.65

Original: $139.00

-65%

Quartz X-cut, 2" dia x 0.5mm, 2 sp - SOX50D05C2—

$139.00

$48.65

Quartz X-cut, 2" dia x 0.5mm, 2 sp - SOX50D05C2

Single crystal SiO2 (quartz)
Size: 2" diameter x 0.5 mm
Orientation: X-cut
Polish: two sides polished
Surface roughness: < 5 A (by AFM)
Packing: in 1000 class clean room by wafer carrier
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. MTI can provide high quality quartz wafers for both research and industries production at the lowest price.

	Typical Physical Properties
Purity Wt %	Saw grade: > 99.9 Optical grade: 99.99
Crystal Structure	Hex. a= 4.914 Å c = 5.405 Å
Growth Method	Hydrothermal
Hardness	7.0 Moh’s
Density	2.684 g/cm³
Melt Point	1610 ^oC ( phase transition point: 573.1^oC)
Specific Heat	0.18 cal/gm
Thermoelectric Constant	1200 mV/^oC @ 300 ^oC
Thermal Conductivity	0.0033 cal/cm/^oC
Thermal Expansion (x10^-6/ ^oC)	a₁₁: 13.71 a₃₃: 7.48
Index of Refraction	1.544
Q Value Acoustic Velocity, SAW Frequency Constant, BAW Piezoelectric Coupling	1.8 x 10⁶ min. 3160 ( m/sec ) 1661 ( kHz/mm ) K² (%) BAW: 0.65 SAW: 0.14
Inclusion	IEC Grade II

choose other quartz substrate

Choose substrate from A -Z

Wafer Carrier Box

Single crystal SiO2 (quartz)
Size: 2" diameter x 0.5 mm
Orientation: X-cut
Polish: two sides polished
Surface roughness: < 5 A (by AFM)
Packing: in 1000 class clean room by wafer carrier
Single crystal quartz wafer is an excellent substrate for microwave filters for wireless communication industries. MTI can provide high quality quartz wafers for both research and industries production at the lowest price.

	Typical Physical Properties
Purity Wt %	Saw grade: > 99.9 Optical grade: 99.99
Crystal Structure	Hex. a= 4.914 Å c = 5.405 Å
Growth Method	Hydrothermal
Hardness	7.0 Moh’s
Density	2.684 g/cm³
Melt Point	1610 ^oC ( phase transition point: 573.1^oC)
Specific Heat	0.18 cal/gm
Thermoelectric Constant	1200 mV/^oC @ 300 ^oC
Thermal Conductivity	0.0033 cal/cm/^oC
Thermal Expansion (x10^-6/ ^oC)	a₁₁: 13.71 a₃₃: 7.48
Index of Refraction	1.544
Q Value Acoustic Velocity, SAW Frequency Constant, BAW Piezoelectric Coupling	1.8 x 10⁶ min. 3160 ( m/sec ) 1661 ( kHz/mm ) K² (%) BAW: 0.65 SAW: 0.14
Inclusion	IEC Grade II

choose other quartz substrate

Choose substrate from A -Z

Wafer Carrier Box