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SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm
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SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm

SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm

Silicon Wafer Specifications:

  • Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp)
      • SiO2=300 nm
      • Ti=10 nm
      • Pt(111)=150 nm
  • Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Substrate Size:            2" diameter +/- 0.5 mm x 0.279 mm
  • Polish:                        one side polished
  • Surface roughness:      < 20 A RMS
  • Maximum Thermal Budget of Pt film: < 650-700  degree C / 1 hr
  • Optional:  you may need tool below to handle the wafer ( click picture to order )
$139.65

Original: $399.00

-65%
SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm

$399.00

$139.65

SiO2+Ti+Pt(111) thin film on Si substrate ,2"x0.279mm,1sp P-type B-doped.R:1-20 ohm.cm

Silicon Wafer Specifications:

  • Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp)
      • SiO2=300 nm
      • Ti=10 nm
      • Pt(111)=150 nm
  • Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Substrate Size:            2" diameter +/- 0.5 mm x 0.279 mm
  • Polish:                        one side polished
  • Surface roughness:      < 20 A RMS
  • Maximum Thermal Budget of Pt film: < 650-700  degree C / 1 hr
  • Optional:  you may need tool below to handle the wafer ( click picture to order )

Product Information

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Description

Silicon Wafer Specifications:

  • Film:         SiO2+Ti+Pt(111) thin film on Si (100) (P-type) substrate ,2"x0.279mm, 1 side polished (1sp)
      • SiO2=300 nm
      • Ti=10 nm
      • Pt(111)=150 nm
  • Resistivity:                  1-20 ohm.cm   (If you would like to measure the resistivity accurately, 
                                      please order our
     Portable 4 Probe Resistivity Testing Instrument.) 
  • Substrate Size:            2" diameter +/- 0.5 mm x 0.279 mm
  • Polish:                        one side polished
  • Surface roughness:      < 20 A RMS
  • Maximum Thermal Budget of Pt film: < 650-700  degree C / 1 hr
  • Optional:  you may need tool below to handle the wafer ( click picture to order )

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