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SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Silicon Wafer Specifications:
- Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate ,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm)
- Resistivity: <0.005 ohm.cm
- Size: 10x5 x 0.5 mm
- Polish: one side polished
- Surface roughness: < 5A, RMS
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$24.15
Original: $69.00
-65%SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)—
$69.00
$24.15SiO2+Ti+Pt thin film on Si substrate ,10x5x0.5mm,1sp,B-doped,( SiO2=500nm,Ti=50nm ,Pt=200nm)
Silicon Wafer Specifications:
- Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate ,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm)
- Resistivity: <0.005 ohm.cm
- Size: 10x5 x 0.5 mm
- Polish: one side polished
- Surface roughness: < 5A, RMS
Related Products
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
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Description
Silicon Wafer Specifications:
- Conductive type: SiO2+Ti+Pt thin film on Si(B-doped) substrate ,10x5x0.5mm,1sp( SiO2=500nm,Ti=50nm ,Pt=200nm)
- Resistivity: <0.005 ohm.cm
- Size: 10x5 x 0.5 mm
- Polish: one side polished
- Surface roughness: < 5A, RMS
Related Products
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
