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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick
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Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

  

Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation.

Materials: Silicon on Sapphire
 

Silicon EPI Layer:

  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness:1.0 um +/- 10%
  • Resistivity: > 100 ohm.cm
  • Micro-particle density ( for particles > 2 um) < 2/cm^2
     
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size: 5x5 x 0.46 mm thickness
  • Front surface: Epi-polished (Ra < 4 nm)
  • Back surface: Optical grade polish
  • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um


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$45.15

Original: $129.00

-65%
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick—

$129.00

$45.15

Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick

  

Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation.

Materials: Silicon on Sapphire
 

Silicon EPI Layer:

  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness:1.0 um +/- 10%
  • Resistivity: > 100 ohm.cm
  • Micro-particle density ( for particles > 2 um) < 2/cm^2
     
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size: 5x5 x 0.46 mm thickness
  • Front surface: Epi-polished (Ra < 4 nm)
  • Back surface: Optical grade polish
  • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater

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Description

  

Silicon on sapphire (SOS) is a hetero-epitaxialprocess for integrated circuitmanufacturing that consists of a thin layer (typically thinner than 0.6 micrometres) of silicongrown on a sapphire (Al2O3) wafer. SOS is part of the Silicon on Insulator (SOI) family of CMOS technologies. SOS is primarily used in aerospace and military applications because of its inherent resistance to radiation.

Materials: Silicon on Sapphire
 

Silicon EPI Layer:

  • Silicon Orientation: (100)
  • Type, Dopant:  Intrinsic type, undoped
  • Silicon Thickness:1.0 um +/- 10%
  • Resistivity: > 100 ohm.cm
  • Micro-particle density ( for particles > 2 um) < 2/cm^2
     
Sapphire Wafer:
  • R plane -- (1-102)  with  single flat
  • Wafer size: 5x5 x 0.46 mm thickness
  • Front surface: Epi-polished (Ra < 4 nm)
  • Back surface: Optical grade polish
  • TTV < 15 um, Bow < 20 um, Warp < 20 um, Flatness (TIR) < 12 um


Related Products

Thin Films  A-Z

Crystal wafer A-Z

Plasma Cleaner

Wafer Containers

Dicing saw

Film Coater
Silicon-on-Sapphire (11-02, R Plane ), 5mmx 5mmx0.46 mm,2sp, Film:1.0um thick | MTI Online Store