SiC - 6H (0001) 8mm dia. x 0.3 mm th., one side polished

Specifications of Substrate

• Orientation:  <0001> +/-0.5
• Dimension: 8mm Dia.x 0.3mm
  
• Polished:  One side  epi polished
• Surface Roughness:  < 10 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight:  40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.08 A       c = 15.117 A
• Stacking sequence: ABCACB  (6H)
• Growth Technique:  MOCVD         
• Polishing: Silicon face polished
• Band Gap: 3.03eV ( Indirect)
• Conductivity type: N
• TTV/Bow/Warp:<25um
• Micropipe Density:  <30 cm^-2
• Resistivity:  0.020~0.200 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity @ 300K: 5 W / cm . K
• Hardness: 9 Mohs

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