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SiC - 6H (0001), 10x10x0.26 mm , two sides polished
Specifications of Substrate
- Orientation: <0001> +/-0.5
- Dimension: 10x10 x 0.26 +/-0.03 mm
- Polished: two sides epi polished
- Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.08 A c = 15.117 A
- Stacking sequence: ABCACB (6H)
- Growth Technique: MOCVD
- Polishing: Silicon face polished
- Band Gap: 3.03 eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Warp: <25 um
- Micropipe Density: <30 cm^-2
- Resistivity: 0.02~0.2 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 4W / cm . K
- Hardness: 9 Mohs
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GaN |
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$69.65
Original: $199.00
-65%SiC - 6H (0001), 10x10x0.26 mm , two sides polished—
$199.00
$69.65SiC - 6H (0001), 10x10x0.26 mm , two sides polished
Specifications of Substrate
- Orientation: <0001> +/-0.5
- Dimension: 10x10 x 0.26 +/-0.03 mm
- Polished: two sides epi polished
- Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.08 A c = 15.117 A
- Stacking sequence: ABCACB (6H)
- Growth Technique: MOCVD
- Polishing: Silicon face polished
- Band Gap: 3.03 eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Warp: <25 um
- Micropipe Density: <30 cm^-2
- Resistivity: 0.02~0.2 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 4W / cm . K
- Hardness: 9 Mohs
Related Product
Other SiC |
GaN |
AlN template |
ZnO |
|
|
|
|
Sapphire |
Dicing Saw |
Wafer Containers |
Film Coater |
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Specifications of Substrate
- Orientation: <0001> +/-0.5
- Dimension: 10x10 x 0.26 +/-0.03 mm
- Polished: two sides epi polished
- Surface Roughness: < 10 A by AFM
Typical Properties of Single Crystal SiC
- Formula weight: 40.10
- Unit Cell: Hexagonal
- Lattice constant: a =3.08 A c = 15.117 A
- Stacking sequence: ABCACB (6H)
- Growth Technique: MOCVD
- Polishing: Silicon face polished
- Band Gap: 3.03 eV ( Indirect)
- Conductivity type: N
- TTV/Bow/Warp: <25 um
- Micropipe Density: <30 cm^-2
- Resistivity: 0.02~0.2 ohm-cm
- Dielectric Constant: e (11) = e (22) = 9.66 e (33) = 10.33
- Thermal Conductivity @ 300K: 4W / cm . K
- Hardness: 9 Mohs
Related Product
Other SiC |
GaN |
AlN template |
ZnO |
|
|
|
|
Sapphire |
Dicing Saw |
Wafer Containers |
Film Coater |
|
|
|
|
