SiC - 6H (0001), 1/4"x1/4"x0.26 mm , two sides polished

Specifications of Substrate

• Orientation:  <0001> +/-0.5
• Dimension:   1/4"x 1/4" x 0.26  +/-0.03 mm
• Polished:  Two sides epi polished
• Surface Roughness:  < 10 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight:  40.10
• Unit Cell: Hexagonal
• Lattice constant:  a =3.08 A       c = 15.117 A
• Stacking sequence: ABCACB  (6H)
• Growth Technique:  MOCVD         
• Polishing : Silicon face polished
•  Band Gap: 3.03 eV ( Indirect)
• Conductivity type:  N
• TTV/Bow/Warp:<25 um
• Micropipe Density:  <30 cm^-2
• Resistivity: 0.02~0.2 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66    e (33) = 10.33
• Thermal Conductivity @ 300K: 4 W / cm . K
• Hardness: 9 Mohs

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