SiC - 4H (0001), 5x5x0.3 mm , one side polished ( C side)

Specifications of Substrate

• Orientation:  <0001> +/-0.5
• Dimension:  5x5 x 0.3  +/-0.03 mm
• Polished:  One sides epi polished on C face
• Surface Roughness: < 10 A by AFM

Typical Properties of Single Crystal SiC

• Formula weight:   40.10
• Unit Cell: Hexagonal
• Lattice constant: a =3.07 A       c = 10.05 A
• Stacking sequence: ABCB  (4H)
• Growth Technique: MOCVD         
• Polishing : Silicon face polished
•  Band Gap:  3.26 eV ( Indirect)
• Conductivity type: N
• TTV/Bow/Warp: <=35um
• Micropipe Density:  <=30 cm^-2
• Resistivity:  0.01~0.5 ohm-cm
• Dielectric Constant: e (11) = e (22) = 9.66     e (33) = 10.33
• Thermal Conductivity @ 300K:   4 W / cm . K
• Hardness:   9 Mohs
• Doping level of nitrogen atoms : 10^18-19 cm^-3

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