🚚 Free Worldwide Shipping on All Orders!Shop Now
SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 5x5x1.0mm
Specifications:
- Film: SiC Epi film with 3C structure grown by PECVD
- Thickness:1.0um +/- 10%
- Orientation: 3C SiC (111)
- Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
- Type and dopant: N type, Undoped
- Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- TTV 5-29
- Bow -9 ~ 3
- Silicon substrate:
- Size: 5x5 x 1.0 mm thickness
- Orientation: (111)
- Type:N type / P doped
- Resistivity:1- 10 ohm.cm
- Polish: Both sides optical polished
Related Products
 |
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
$135.00
SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 5x5x1.0mm—
$135.00
SiC-3C N-type Film on Silicon (111) Wafer, Film: 1.0um Thick substrate size: 5x5x1.0mm
Specifications:
- Film: SiC Epi film with 3C structure grown by PECVD
- Thickness:1.0um +/- 10%
- Orientation: 3C SiC (111)
- Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
- Type and dopant: N type, Undoped
- Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- TTV 5-29
- Bow -9 ~ 3
- Silicon substrate:
- Size: 5x5 x 1.0 mm thickness
- Orientation: (111)
- Type:N type / P doped
- Resistivity:1- 10 ohm.cm
- Polish: Both sides optical polished
Related Products
|
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Specifications:
- Film: SiC Epi film with 3C structure grown by PECVD
- Thickness:1.0um +/- 10%
- Orientation: 3C SiC (111)
- Surface: CMP - film chemical mechanical polished with Ra < 10 Angstrom
- Type and dopant: N type, Undoped
- Surface defects density (microscopic inspection of crystallites or other macro-defects) <= 3E3cm^2
- TTV 5-29
- Bow -9 ~ 3
- Silicon substrate:
- Size: 5x5 x 1.0 mm thickness
- Orientation: (111)
- Type:N type / P doped
- Resistivity:1- 10 ohm.cm
- Polish: Both sides optical polished
Related Products
|
|
|
|
|
|
|
Thin Films A-Z |
Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
