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Si Wafer (111), 4"dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)
- Single crystal Si
- Conductivity: N type ( undoped)
- Resistivity: >5000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (111)
- Polish: One side polished
- Surface roughness: < 5A
Optional: you may need tool below to handle the wafer ( click picture to order )
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Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
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$54.25
Original: $155.00
-65%Si Wafer (111), 4"dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)—
$155.00
$54.25Si Wafer (111), 4"dia x 0.5 mm, 1SP, N Type (undoped, FZ R>5000 ohm-cm)
- Single crystal Si
- Conductivity: N type ( undoped)
- Resistivity: >5000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (111)
- Polish: One side polished
- Surface roughness: < 5A
Optional: you may need tool below to handle the wafer ( click picture to order )
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Single crystal Si
- Conductivity: N type ( undoped)
- Resistivity: >5000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (111)
- Polish: One side polished
- Surface roughness: < 5A
Optional: you may need tool below to handle the wafer ( click picture to order )
|
|
|
|
|
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
