
Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000
Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000
- Single crystal Si,
- Conductivity: Undoped
- Type: N
- Resistivity: > 1000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (100)
- Polish: two sides polished
- Surface roughness: < 5A
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Si Wafer (100), 4" dia x 0.5 mm, 2SP, N-type, Undoped, resistivities: > 1000 ohm-cm - SiUa101D05C2R1000
- Single crystal Si,
- Conductivity: Undoped
- Type: N
- Resistivity: > 1000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (100)
- Polish: two sides polished
- Surface roughness: < 5A
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
- Single crystal Si,
- Conductivity: Undoped
- Type: N
- Resistivity: > 1000 ohm-CM
- Size: 4" diameter x 0.5 mm
- Orientation: (100)
- Polish: two sides polished
- Surface roughness: < 5A
Other Crystal wafer A-Z |
Plasma Cleaner |
Wafer Containers |
Dicing saw |
Film Coater |










