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Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm
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Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

  • Single crystal                Si,   
  • Conductivity:                N type  ( un-doped)
  • Resistivity:                    >1000 ohm-CM
  • Size:                            3" diameter x  0.5  mm
  • Orientation:                  (100)  
  • Polish:                          One side polished
  • Surface roughness:        < 5A


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$89.00
Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm—
$89.00

Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm

  • Single crystal                Si,   
  • Conductivity:                N type  ( un-doped)
  • Resistivity:                    >1000 ohm-CM
  • Size:                            3" diameter x  0.5  mm
  • Orientation:                  (100)  
  • Polish:                          One side polished
  • Surface roughness:        < 5A


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Plasma Cleaner

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Film Coater

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Description

  • Single crystal                Si,   
  • Conductivity:                N type  ( un-doped)
  • Resistivity:                    >1000 ohm-CM
  • Size:                            3" diameter x  0.5  mm
  • Orientation:                  (100)  
  • Polish:                          One side polished
  • Surface roughness:        < 5A


Related Product

Other Crystal wafer A-Z

Plasma Cleaner

 Wafer Containers

Dicing saw

Film Coater
Si wafer (100), 3 "dia x0.5 mm, 1sp, N type un-doped R:>1000 ohm.cm | MTI Online Store