PMNT Substrate (011) 5x5x0.5mm, One side polished - PMNTg050505S1
Substrate Specifications
- Size: 5x5x 0.5mm +/-0.05mm
- Orientation: (011 ) +/-0.5 Deg
- Growing Method: Bridgman method
- Polish: One side EPI polished by CMP tecnology with less sub-surface lattice damage.
- Surface Finish(Ra): <10 A
- Pack: Packed in 100 grade plastic bag under 1000 class clean room.
- Warning: PMNT crystal has a visible twin on a polished surface, which is normal nature .
Typical Properies
ChemicalComposition: |
( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x; x=0.29-0.32 |
|
R3m, Rhombohedral a0 ~ 4.024 A, (pseudo-cubic, varies with composition |
Melting Point: |
1280 oC |
Density |
8.1 g/cm3 |
Piezoelectric Coefficient |
d33 m >2000 pC/N |
Coupling Constant |
k33 (longitudinal mode) >92% kt (thickness mode) 59-62% k33' (beam mode) 84-88% |
Dielectric Constant |
e (at 1kHz after poling) 4000 |
Dielectric loss |
tan delta < 0.9 |
Curie temperature: |
135-150 oC |
Max size |
25 mm x 25 mm x 1- 2 mm thickness along [001], |
Related Products
LaAlO3 |
MgO |
YSZ |
SrLaAlO4 |
|
|
|
|
Dicing Saw |
RTP Furnace |
Wafer Containers |
Film Coaters |
|
|
|
 |
Original: $225.00
-65%$225.00
$78.75PMNT Substrate (011) 5x5x0.5mm, One side polished - PMNTg050505S1
Substrate Specifications
- Size: 5x5x 0.5mm +/-0.05mm
- Orientation: (011 ) +/-0.5 Deg
- Growing Method: Bridgman method
- Polish: One side EPI polished by CMP tecnology with less sub-surface lattice damage.
- Surface Finish(Ra): <10 A
- Pack: Packed in 100 grade plastic bag under 1000 class clean room.
- Warning: PMNT crystal has a visible twin on a polished surface, which is normal nature .
Typical Properies
ChemicalComposition: |
( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x; x=0.29-0.32 |
|
R3m, Rhombohedral a0 ~ 4.024 A, (pseudo-cubic, varies with composition |
Melting Point: |
1280 oC |
Density |
8.1 g/cm3 |
Piezoelectric Coefficient |
d33 m >2000 pC/N |
Coupling Constant |
k33 (longitudinal mode) >92% kt (thickness mode) 59-62% k33' (beam mode) 84-88% |
Dielectric Constant |
e (at 1kHz after poling) 4000 |
Dielectric loss |
tan delta < 0.9 |
Curie temperature: |
135-150 oC |
Max size |
25 mm x 25 mm x 1- 2 mm thickness along [001], |
Related Products
LaAlO3 |
MgO |
YSZ |
SrLaAlO4 |
|
|
|
|
Dicing Saw |
RTP Furnace |
Wafer Containers |
Film Coaters |
|
|
|
|
Product Information
Product Information
Shipping & Returns
Shipping & Returns
Description
Substrate Specifications
- Size: 5x5x 0.5mm +/-0.05mm
- Orientation: (011 ) +/-0.5 Deg
- Growing Method: Bridgman method
- Polish: One side EPI polished by CMP tecnology with less sub-surface lattice damage.
- Surface Finish(Ra): <10 A
- Pack: Packed in 100 grade plastic bag under 1000 class clean room.
- Warning: PMNT crystal has a visible twin on a polished surface, which is normal nature .
Typical Properies
ChemicalComposition: |
( PbMg 0.33 Nb 0.67)1-x: (PbTiO3)x; x=0.29-0.32 |
|
R3m, Rhombohedral a0 ~ 4.024 A, (pseudo-cubic, varies with composition |
Melting Point: |
1280 oC |
Density |
8.1 g/cm3 |
Piezoelectric Coefficient |
d33 m >2000 pC/N |
Coupling Constant |
k33 (longitudinal mode) >92% kt (thickness mode) 59-62% k33' (beam mode) 84-88% |
Dielectric Constant |
e (at 1kHz after poling) 4000 |
Dielectric loss |
tan delta < 0.9 |
Curie temperature: |
135-150 oC |
Max size |
25 mm x 25 mm x 1- 2 mm thickness along [001], |
Related Products
LaAlO3 |
MgO |
YSZ |
SrLaAlO4 |
|
|
|
|
Dicing Saw |
RTP Furnace |
Wafer Containers |
Film Coaters |
|
|
|
|
